Results 91 to 100 of about 351,357 (273)

Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors

, 2010
We have carried out ab-initio calculation and study of structural and electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self consistent Tight binding Linear Muffin Tin orbital (TB-LMTO)
Andersen, Artus, B. Ganguli, Barth, Ganguli, Hahn, Hohenberg, Honeyman, Hopkins, Horinaka, Ishida, Jaffe, Jepsen, Jiang, Kazmerski, Kohn, Laksari, Levine, Mahadevan, Miller, Ozaki, Reshak, S. Mishra, Sato, Shay, Shay, Tell   +26 more
core   +1 more source

Engineering Porous Hollow Metal‐Poly(Heptazine Imide) Spheres: An Optimized Synthetic Strategy for Controlling Surface, Morphology, and Properties

Advanced Functional Materials, EarlyView.
Hollow poly(heptazine imide) spheres are prepared through a novel approach that integrates hard templating with ionothermal synthesis. This method enables precise control over surface area, pore volume, hydrophilicity, light absorption, band position, and metal composition. These tunable properties facilitate the customized design of semiconductors for
Lingli Ni, Erik Troschke, Henrik Vorwerk, Shiva Shahbazi Avarvand, Andreas Stihl, Nadzeya Brezhneva, Marius Hermesdorf, Desirée Leistenschneider, Felix H. Schacher, Jacob Schneidewind, Martin Oschatz   +10 more
wiley   +1 more source

A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines, 2020
This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators
Tianyun Wang, Zeji Chen, Qianqian Jia, Quan Yuan, Jinling Yang, Fuhua Yang   +5 more
doaj   +1 more source

Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

, 2007
II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are ...
Feng, Y. P., Pan, H., Peng, G. W., Sha, Z. D., Shen, L., Wu, R. Q., Yang, M.   +6 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Hole crystallization in semiconductors

, 2005
When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle.
Abrikosov A A, Fehske H, Filinov V S, Filinov V S, For details, H Fehske, M Bonitz, P R Levashov, Saarela M, V E Fortov, V S Filinov, Wachter P   +11 more
core   +1 more source

Enhancing Direct Solar Water Splitting via ALD of Multifunctional TiO2/Pt Nanoparticle Coatings With Engineered Interfaces to GaAs/GaInP Tandem Cells

Advanced Functional Materials, EarlyView.
Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth, Verena Streibel, Oliver Bienek, Sergej Levashov, Johannes Dittloff, Kristof Möller, Johanna Eichhorn, Matthias M. May, Ian D. Sharp   +8 more
wiley   +1 more source

120 GHz Sub-2 V Thin-Film Lithium Niobate Modulators on Silicon Substrate Using Thick Capacitively Loaded Slow Wave Electrodes

IEEE Photonics Journal
Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links.
Zhiguo Yu, Donghe Tu, Wei Yan, Huan Guan, Lei Jiang, Xuejiao Sun, Zhiyong Li   +6 more
doaj   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

InMemQK: A Product Quantization Based MatMul Module for Compute-in-Memory Attention Macro

Applied Sciences
Large Language Models (LLMs), based on transformer architecture, have demonstrated remarkable capabilities in natural language processing tasks, enabling machines to generate human-like text and engage in meaningful dialogues.
Pengcheng Feng, Yihao Chen, Jinke Yu, Hao Yue, Zhelong Jiang, Yi Xiao, Wan’ang Xiao, Huaxiang Lu, Gang Chen   +8 more
doaj   +1 more source