Results 51 to 60 of about 570,799 (322)

Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds

open access: yes, 2010
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter interesting both for
A von Middendorff   +34 more
core   +1 more source

Nanoindentation Criteria for Combinatorial Thin Film Libraries

open access: yesAdvanced Engineering Materials, EarlyView.
Thin‐film material libraries are compositional spreads used for screening composition‐structure‐property relationships. Nanoindentation is often used to characterize mechanical behavior across these systems, however variations in methodology are widespread.
Andre Bohn, Adie Alwen, Andrea M. Hodge
wiley   +1 more source

Dynamic Markov Model: Password Guessing Using Probability Adjustment Method

open access: yesApplied Sciences, 2021
In password guessing, the Markov model is still widely used due to its simple structure and fast inference speed. However, the Markov model based on random sampling to generate passwords has the problem of a high repetition rate, which leads to a low ...
Xiaozhou Guo   +5 more
doaj   +1 more source

Bipolar-Driven Large Magnetoresistance in Silicon

open access: yes, 2013
Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic ...
A. B. Pippard   +9 more
core   +1 more source

Ternary Nitride Semiconductors in the Rocksalt Crystal Structure [PDF]

open access: yes, 2018
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties.
Bauers, Sage R.   +12 more
core   +2 more sources

3D‐Printed Giant Magnetoresistive (GMR) Sensors Based on Self Compliant Springs

open access: yesAdvanced Engineering Materials, EarlyView.
This work explores 3D‐printed GMR sensors utilizing self‐compliant spring structures and conductive PLA composites. By optimizing arm width, we achieved high piezoresistive (0.34%/mm) and magnetoresistive (0.77%/mT) sensitivities. Demonstrated through Bluetooth‐integrated pressure and magnetic position sensing, these full printed low‐cost, customizable
Josu Fernández Maestu   +4 more
wiley   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Point convolutional neural network algorithm for Ising model ground state research based on spring vibration

open access: yesScientific Reports
The ground state search of the Ising model can be used to solve many combinatorial optimization problems. Under the current computer architecture, an Ising ground state search algorithm suitable for hardware computing is necessary for solving practical ...
Zhelong Jiang   +10 more
doaj   +1 more source

BEANIE – A 32-bit Cipher for Cryptographic Mitigations Against Software Attacks

open access: yesIACR Transactions on Symmetric Cryptology
In modern CPU architectures, various security features to mitigate software attacks can be found. Examples of such features are logical isolation, memory tagging or shadow stacks. Basing such features on cryptographic isolation instead of logical checks
Simon Gerhalter   +9 more
doaj   +1 more source

COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES

open access: yesLe Journal de Physique Colloques, 1990
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
openaire   +1 more source

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