Results 71 to 80 of about 351,357 (273)
Bipolar-Driven Large Magnetoresistance in Silicon
, 2013 Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic ...
A. B. Pippard +9 more
core +1 more source
Bipolar polaron pair recombination in P3HT/PCBM solar cells [PDF]
, 2015 The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors.
Behringer, Konstantin M. +8 more
core +4 more sources
Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]
MRS Proceedings, 1989 ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
openaire +2 more sources
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, EarlyView.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Transient Non-linear Thermal FEM Simulation of Smart Power Switches and Verification by Measurements [PDF]
, 2007 Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly temperature dependent.
Glavanovics, M., Kosel, V., Sleik, R.
core +1 more source
Multilayers of Zinc-Blende Half-Metals with Semiconductors
, 2004 We report on first-principles calculations of multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalised structures, as well as the case of an
Dederichs, P. H. +2 more
core +2 more sources
Advanced Functional Materials, EarlyView.HKUST‐1/TiO2 composite materials show a very high photocatalytic hydrogen evolution rate which increases as a function of the irradiation time until reaching a plateau and even surpasses the performance of the 1%Pt/TiO2 material after three photocatalytic cycles.
Alisha Khan +9 more
wiley +1 more source
Design and Simulation of A Novel Piezoelectric AlN-Si Cantilever Gyroscope
Micromachines, 2018 A novel design of piezoelectric aluminum nitride (AlN)-Si composite cantilever gyroscope is proposed in this paper. The cantilever is stimulated to oscillate in plane by two inverse voltages which are applied on the two paralleled drive electrodes ...
Jian Yang +6 more
doaj +1 more source
Spin- and energy relaxation of hot electrons at GaAs surfaces
, 2005 The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth.
A Sutton +37 more
core +1 more source