Results 81 to 90 of about 570,799 (322)

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

NeuAFG: Neural Network-Based Analog Function Generator for Inference in CIM

open access: yesIEEE Access
Resistive Random-Access Memory (RRAM)-based Compute-in-Memory (CIM) architectures offer promising solutions for energy-efficient deep neural network (DNN) inference.
Pengcheng Feng   +11 more
doaj   +1 more source

Spin- and energy relaxation of hot electrons at GaAs surfaces

open access: yes, 2005
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth.
A Sutton   +37 more
core   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

A Time Mode Pulse Interleaver in a Silicon-on-Insulator Platform for Optical Analog-to-Digital Converters

open access: yesMicromachines
We propose and demonstrate a novel on-chip optical sampling pulse interleaver based on time mode interleaving. The designed pulse interleaver was fabricated on a 220 nm silicon-on-insulator (SOI) platform, utilizing only one S-shaped delay waveguide ...
Donghe Tu   +9 more
doaj   +1 more source

Research on Wafer-Level MEMS Packaging with Through-Glass Vias

open access: yesMicromachines, 2018
A MEMS fabrication process with through-glass vias (TGVs) by laser drilling was presented, and reliability concerns about MEMS packaging with TGV, likes debris and via metallization, were overcome.
Fan Yang   +6 more
doaj   +1 more source

Transient Non-linear Thermal FEM Simulation of Smart Power Switches and Verification by Measurements [PDF]

open access: yes, 2007
Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly temperature dependent.
Glavanovics, M., Kosel, V., Sleik, R.
core   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

open access: yesAdvanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich   +6 more
wiley   +1 more source

Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)

open access: yesAdvanced Functional Materials, EarlyView.
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao   +5 more
wiley   +1 more source

Designing isoelectronic counterparts to layered group V semiconductors

open access: yes, 2015
In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semiconductors.
Guan, Jie   +3 more
core   +2 more sources

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