Results 161 to 170 of about 2,116 (217)

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Ultra-sensitive heterojunction double gate BioTFET device for SARS-CoV-2 biomolecules detection. [PDF]

Sci Rep
Vimala P, Geege AS, Mohankumar N, Arun Samuel TS, Ananth Kumar T, Dhanaselvam PS, Anand IV.   +6 more
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Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors. [PDF]

Nat Commun
Kim S, Kim SH, Hwang HU, Kim J, Kim JW, Kwak IC, Kang B, Lee S, Jo SB, Ryu DY, Kim H, Myoung JM, Kang MS, Oh S, Cho JH.   +14 more
europepmc   +1 more source

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Study on the effect of 65 nm NMOS transistor using SILVACO TCAD

Materials Today: Proceedings, 2023
Azira Ahmad Tarmizi, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood, Irni Hamiza Hamzah   +5 more
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Organic light emitting diode simulation using Silvaco TCAD tools

2016 International Siberian Conference on Control and Communications (SIBCON), 2016
Currently organic light emitting diodes (OLEDs) have become much popular in many spheres of microelectronics including optoelectronic applications, modulated light sources, internet connection etc. The research paper represents the results of two polymer layer organic light emitting diode (OLED) 1D and 2D-numerical simulation and analysis using Silvaco
I. A. Lysenko, L. A. Patrashanu, D. D. Zykov   +2 more
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SILVACO TCAD Implementation of Dual Junction Quantum Well Solar Cell

2020
{"references": ["K.W. J Barnham and G. Duggan (1990), \"A new approach to high-efficiency multi-band-gap solar cells\", J. Appl. Phys., Volume 67, Issue 7, ISSN: 0021-8979, Available at: https://doi.org/10.1063/1.345339.", "J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts and C.
Islam, Muhammad Johirul, Sanjina Mostafa, Md. Iqbal Bahar Chowdhury   +2 more
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Performance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD Tools

Solid State Phenomena, 2023
Metal oxide semiconductor (MOS) capacitor is a trilayer device that comprises of metal, dielectric, and semiconductor layer. The advancement of MOS technology has greatly give huge improvement to MOS devices which lead to scaling down the MOS devices.
Lyly Nyl Ismail, Norsabrina Sihab, Nur Sa'adah Mohd Sauki   +2 more
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Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness

Key Engineering Materials, 2023
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of heterostructure composition and SiGe channel thickness on the electrical characteristics of p-MOSFET are ...
Siti NorFarah Nadia Mohd Salleh, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood, Irni Hamiza Hamzah   +5 more
openaire   +1 more source