Mesh Grid of SILVACO TCAD Effect on Net Doping Profile for NMOS Structures
AIP Conference Proceedings, 2009Process of developing the NMOS structure is performed in 2D SILVACO Athena and Atlas Simulation. The NMOS fabrication process steps were chosen from reference [4]. Mesh grid effect on net doping profile was obtained by varying the grid. Variation of grid was determined through observation between fine mesh and loosen mesh in y‐axis.
M. Redzuan +9 more
openaire +1 more source
Silvaco TCAD Implementation of All-InGaN Based Quantum Well Solar Cell
In this work an all-InGaN-based p-i-n structured quantum well solar cell (QWSC) has been implemented in Silvaco TACD environment. Use of same material for different layers reduces the lattice mismatch for which recombination loss is reduced and also, insertion of low-bandgap quantum wells (QWs) enhances the absorption of long-wavelength light for whichSyeda Nura Nabiah +2 more
openaire +1 more source
Modeling and simulation of microscopic defects in CIS-based solar cell thin film using silvaco TCAD
RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, 2013Reactively sputtered copper indium sulfide (CIS) chalcopyrite semiconductor has been actively studied as the potential absorber layer for solar cell thin film application. Using sputtering technique however could result in the formation of several types of defects for example microscopic defects. Microscopic defects are formed within the absorber layer
Raudah Abu Bakar +5 more
openaire +1 more source
Mathematical Validation of 100nm n-MOSFET using Silvaco TCAD
2023 7th International Conference On Computing, Communication, Control And Automation (ICCUBEA), 2023Priti J. Rajput, Sheetal U. Bhandari
openaire +1 more source
Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD
2017This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight.
openaire +1 more source
Προσομοίωση JFET καρβιδίου πυριτίου με το TCAD εργαλείο της SILVACO
2013In this thesis the simulation with TCAD, the basic function of SILVACO ATLAS and the difficulties that somebody encounters in power device simulations.
openaire +1 more source
III-V MOSFET Structure (InP/InAs/InGaAs) I-V Characteristics Using Silvaco TCAD Simulator
2018Our work is used to investigate the electrical proprieties of III-V MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from an InP/InAs/InGaAs structure. This simulation is done using Silvaco TCAD tools. We solve the coupled Poisson-Schrodinger equation that gives the carriers concentration and their eigen state energies at each level.
S. Ammi +3 more
openaire +1 more source
Design and Simulation of Nano Scale FIN FET Using Silvaco TCAD
2021 International Conference Engineering and Telecommunication (En&T), 2021Raman Saurabh +3 more
openaire +1 more source
A study on ZnO/GaN and ZnO/PGaN structures for optoelectronic applications via SILVACO TCAD
ESTEEM Academic JournalThe integration of metal oxide materials with semiconductor substrates has emerged as a promising strategy to enhance the performance of optoelectronic devices. However, studies focusing on zinc oxide (ZnO) embedded directly onto porous gallium nitride (PGaN) remain limited.
Nur Sabrina Mohd Hassan +7 more
openaire +1 more source
Simulation of Optimum Stored Charge in SONOS FLASH Memory using Silvaco TCAD
2022 6th International Conference on Devices, Circuits and Systems (ICDCS), 2022Samdar Singh +3 more
openaire +1 more source