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Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams
IEEE Transactions on Nuclear Science, 1987Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region.
M. A. Xapsos +7 more
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Single Event Displacement Effects in a VLSI
Russian Microelectronics, 2023The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated.
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Single-Event Effects Test Methods
2019This chapter presents an overview of main types of single-event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including
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Monte Carlo Simulation of Single Event Effects
IEEE Transactions on Nuclear Science, 2010In this paper, we describe a Monte Carlo approach for estimating the frequency and character of single event effects based on a combination of physical modeling of discrete radiation events, device simulations to estimate charge transport and collection, and circuit simulations to determine the effect of the collected charge. A mathematical analysis of
Robert A. Weller +6 more
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Mitigation of Single Event Effects
2016Mitigation of single event soft errors has taken on growing importance as transistor sizes have decreased. Commercial manufacturers will soon need to address single-event effects as terrestrial radiation sources become a significant source of soft errors in ground-based applications.
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Radiation damage on dielectrics: Single event effects
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2009Single event effects are due to ionizing particles impinging on sensitive circuit regions, directly or as a by-product of nuclear reactions. Atmospheric neutrons originating from the interaction of cosmic rays with the outer layers of the atmosphere, alpha particles from radioactive contaminants at sea level, and heavy ions in space continuously hit ...
PACCAGNELLA, ALESSANDRO +2 more
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Single-event effect ground test issues
IEEE Transactions on Nuclear Science, 1996Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3 ...
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Microbeam studies of single-event effects
IEEE Transactions on Nuclear Science, 1996The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused
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SINGLE EVENT EFFECTS IN THE NANO ERA
International Journal of High Speed Electronics and Systems, 2008Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make ...
M. L. ALLES +4 more
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Single Event Effects on Commercial Optical Transceivers
Asia Communications and Photonics Conference 2016, 2016An irradiation testing has been implemented to analyze single event effects on commercial high speed optical transceivers. The result proved that PIN diode and micro controller unit are sensitive devices to single event effects.
Yang Wang +4 more
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