Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
Science China Information Sciences, 2017Jinxin Zhang +7 more
openaire +1 more source
Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty
Electronics (Switzerland), 2020Yaqing Chi, Jing Tian, Jianjun Chen
exaly
The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature
Electronics (Switzerland), 2023Xiaoyu Pan, Liu Yinong, Guo Hongxia
exaly
Single event transient (SET) for a novel step-truncated SELBOX FinFET device
Analog Integrated Circuits and Signal ProcessingBaojun Liu, Jing Zhu
openaire +1 more source
SET-SAT: Susceptibility Analysis Tool of Single Event Transients for Combinational Cells
2024 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS)Mateus E. Pietro +2 more
openaire +1 more source
Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain
Symmetry, 2020Yaqing Chi, Aq Wu, Chi Yaqing
exaly
Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET
Nuclear Instruments & Methods in Physics Research B, 2022Baojun Liu
exaly
The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET
Symmetry, 2019Pengcheng Huang +2 more
exaly
On-Chip Characterization of Single-Event Transient Pulsewidths
IEEE Transactions on Device and Materials Reliability, 2006Ronald Schrimpf +2 more
exaly
A comprehensive analog single-event transient analysis methodology
IEEE Transactions on Nuclear Science, 2004M W Savage, J L Titus, C Poivey
exaly

