Results 201 to 203 of about 214 (203)

Single event transient pulse widths in digital microcircuits

IEEE Transactions on Nuclear Science, 2004
exaly  

Analysis of single event transient impact in Si/Si-Ge Gate-All-Around nanowire FET using TCAD

Results in Engineering
Satheesh Kumar S
exaly  

A methodology for characterization, modeling and mitigation of single event transient effects in CMOS standard combinational cells (Eine Methode zur Charakterisierung, Modellierung und Minderung von SET Effekten in kombinierten CMOS-Standardzellen)

openaire   +1 more source