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Single-event transient (SET) characterization of a LM119 voltage comparator: an approach to SET model validation using a pulsed laser

RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605), 2002
The characteristics of single-event transients (SETs) generated in an LM119 voltage comparator with a pulsed laser have been studied under a wide variety of operating conditions. Those transients can be compared with transients obtained from circuit simulator programs to validate the model parameters used by those programs.
S. Buchner   +5 more
openaire   +1 more source

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015
Abstract We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures.
Gaillardin, M.   +8 more
openaire   +2 more sources

Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

IEEE Radiation Effects Data Workshop, 2003
Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.
R. Koga   +4 more
openaire   +1 more source

Implications of Total Dose on Single-Event Transient (SET) Pulse Width Measurement Techniques

IEEE Transactions on Nuclear Science, 2008
Most pulse width characterization circuits measure single-event transients (SETs) using a target circuit consisting of long inverter chains or temporal latches exposed to heavy-ions over extended periods of time. For these approaches, circuit-level effects eliminate shorter pulses due to prolonged heavy-ion exposure providing the worst case estimate of
A. Balasubramanian   +6 more
openaire   +1 more source

Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013
Heavy-ion tests on 65nm CMOS Flip-Flops with different topologies are conducted to investigate their susceptibility to single event upsets (SEUs) and single event transients (SETs). The test results show that SETs on scan-enable node (SE) may cause a large number of SEUs, and the conventional delay filter is vulnerable to SETs, which can reduce the ...
Xinyuan Zhao, Liang Wang, Suge Yue
openaire   +1 more source

Single Event Transient (SET) Response of National Semiconductor's ELDRS-Free LM139 Quad Comparator

2009 IEEE Radiation Effects Data Workshop, 2009
Heavy ion and pulsed laser Single Event Transient (SET) data are presented for National Semiconductor's LM139AxLQMLV (5692R9673802VxA). The SET signatures for this part are compared to older versions of the part. The results confirm complications in performing SET testing on bipolar analog products reported by others plus raise new considerations when ...
Kirby Kruckmeyer   +2 more
openaire   +1 more source

A New Analytical Model of SET Latching Probability for Circuits Experiencing Single- or Multiple-Cycle Single-Event Transients

Journal of Electronic Testing, 2014
As technology scales down, more single-event transients (SETs) are expected to occur in combinational circuits and thus contribute to the increase of soft error rate (SER). We propose a systematic analysis method to precisely model the SET latching probability.
Hoda Pahlevanzadeh, Qiaoyan Yu
openaire   +1 more source

SET-PAR: Place and Route Tools for the Mitigation of Single Event Transients on Flash-Based FPGAs

2015
Flash-based Field Programmable Gate Arrays (Flash-based FPGAs) are becoming more and more interesting for safety critical applications due to their re-programmability features while being non-volatile. However, Single Event Transients (SETs) in combinational logic represent their primary source of critical errors since they can propagate and change ...
STERPONE, Luca, DU, BOYANG
openaire   +1 more source

Single Event Transient (SET) Susceptibility of the Texas Instruments LM139 Quad Comparator under Proton Irradiation

2013 IEEE Radiation Effects Data Workshop (REDW), 2013
Proton Single Event Transient (SET) data are presented for the Texas Instruments (National Semiconductor) LM139AxQMLV (5962R9673801VxA).
Razvan Gaza, Jaime Cooper
openaire   +1 more source

Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques

IEEE Transactions on Nuclear Science, 2018
Single-event transients (SETs) in 16-/14-nm bulk fin field effect transistor (finFET) logic chains have been measured using a custom-designed test IC. A variety of logic gate chains were designed, and SET pulse widths were obtained across a wide range of supply voltages. In light of the increased SET response at reduced supply voltages, the efficacy of
J. A. Maharrey   +9 more
openaire   +1 more source

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