Results 231 to 240 of about 853,970 (265)

Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science, 2005
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell.
G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami   +4 more
openaire   +1 more source

Microbeam studies of single-event effects

IEEE Transactions on Nuclear Science, 1996
The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused
openaire   +1 more source

BRAM implementation of a single-event upset sensor for adaptive single-event effect mitigation in reconfigurable FPGAs

2017 NASA/ESA Conference on Adaptive Hardware and Systems (AHS), 2017
In this paper, we study the performance of a Block RAM (BRAM)-based embedded radiation sensor for adaptive single-event effect mitigation in FPGAs. To achieve this, we designed custom BRAM wrappers to extend the Xilinx BRAM macros with scrubbing and error correction, for both free and used BRAMs (utilized by the user). A case study demonstrates that in
Robért Glein, Philipp Mengs, Florian Rittner, Rainer Wansch, Albert Heuberger   +4 more
openaire   +1 more source

Single-event effects rate prediction

IEEE Transactions on Nuclear Science, 1996
Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results.
openaire   +1 more source

Single-Event Effects Test Methods

2019
This chapter presents an overview of main types of single-event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including
openaire   +1 more source

SINGLE EVENT EFFECTS IN AVIONICS AND ON THE GROUND

International Journal of High Speed Electronics and Systems, 2004
Single event effects in electronics caused by the atmospheric neutrons have been an issue for systems using large blocks of random access memory (RAM) in avionics applications as well as those on the ground. At ground level there are two main sources of single event effects, alpha particles from the packaging materials as well as the neutrons, but at ...
openaire   +1 more source

Single Event Effects: Mechanisms and Classification

2010
Single Event Effects (SEEs) induced by heavy ions, protons, and neutrons become an increasing limitation of the reliability of electronic components, circuits, and systems, and have stimulated abundant past and undergoing work for improving our understanding and developing mitigation techniques.
openaire   +1 more source

Analysis of Single Event Effects on Embedded Processor

Electronics (Switzerland), 2021
Luca Sterpone, Sarah Azimi, Corrado De Sio   +2 more
exaly  

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Micromachines, 2023
Yiren Yu, Zijun Cheng, Rongyao Ma
exaly  

Destructive single-event effects in semiconductor devices and ICs

IEEE Transactions on Nuclear Science, 2003
F W Sexton
exaly