Results 251 to 260 of about 312,625 (306)
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Single event upset rates in space
IEEE Transactions on Nuclear Science, 1992SEUs (single event upsets) in the CRRES (Combined Release and Radiation Effects Satellite) MEP (Microelectronic Package Space Experiment) showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM (random access memory) showed a different response to the proton belts than some 51 RAMs ...
A. Campbell, P. McDonald, K. Ray
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Single event upset mitigation for FDP2008
2011 9th IEEE International Conference on ASIC, 2011Highly integrated contemporary SRAM-based Field Programmable Gate Arrays (FPGAs) lead to high occurrence-rate of transient faults induced by Single Event Upsets (SEUs) in FPGAs' configuration memory. In this paper, Fudan Design Environment (FDE) Triple Module Redundancy (TMR) approach for design triplication has been devised to meet high-reliability ...
null Meng Yang, null Gengsheng Chen
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Single Event Upsets in NMOS Microprocessors
IEEE Transactions on Nuclear Science, 1981Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs.
C. S. Guenzer +2 more
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1988
Abstract : This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles.
Paul R. Measel +3 more
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Abstract : This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles.
Paul R. Measel +3 more
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Single Event Upset: Experimental
1997The discussion in this chapter centers around the major single event upset (SEU) simulation sources. Their importance lies in the fact that simulation methods are one of the few means by which microcircuit susceptibility to SEU can be measured. These sources and source types are few in number, principally because of the somewhat unusual properties of ...
George C. Messenger, Milton S. Ash
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Anomalies due to single event upsets
28th Aerospace Sciences Meeting, 1990The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.
P. Robinson +3 more
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1997
This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
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This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
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Laser Simulation of Single Event Upsets
IEEE Transactions on Nuclear Science, 1987A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a ...
S. P. Buchner +7 more
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Non-random single event upset trends
IEEE Transactions on Nuclear Science, 1989A macroscopic investigation of single-even-upset (SEU) trends for a class of CMOS/NMOS static RAMs exposed to heavy ions and protons has been performed. Analysis of the logical and spatial distribution of upsets as well as individual bit-upset polarity shows the need to consider the effects of peripheral circuitry interactions in understanding and ...
P.T. McDonald +3 more
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Single-event upset effects in optocouplers
IEEE Transactions on Nuclear Science, 1998Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston +4 more
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