Results 171 to 180 of about 16,144 (237)

Empirical Modeling of Single-Event Upset (SEU) in NMOS Depletion-Mode-Load Static RAM (SRAM) Chips

IEEE Transactions on Nuclear Science, 1986
J. A. Zoutendyk, L. S. Smith, George Soli, Stephen L. Smith, G. Atwood, P. Thieberger   +5 more
openalex   +2 more sources

Investigation of single-event upset (SEU) in an advanced bipolar process

, 1988
J. A. Zoutendyk, Elaine C. Secrest, D.F. Berndt   +2 more
openalex   +2 more sources

Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions

, 1997
R. Koga, S.H. Penzin, K.B. Crawford, William R. Crain, Steven C. Moss, S.D. Pinkerton, S. D. LaLumondiere, M.C. Maher   +7 more
openalex   +2 more sources

Single-Event Upset (SEU) in a Dram with On-Chip Error Correction

IEEE Transactions on Nuclear Science, 1987
J. A. Zoutendyk, H. R. Schwartz, Robert Watson, Zille Hasnain, Leland R. Nevill   +4 more
openalex   +2 more sources

Experimental Determination of Single-Event Upset (SEU) as a Function of Collected Charge in Bipolar Integrated Circuits

IEEE Transactions on Nuclear Science, 1984
J. A. Zoutendyk, C. J. Malone, L. S. Smith   +2 more
openalex   +2 more sources

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

IEEE Transactions on Nuclear Science, 2008
Kevin M. Warren, A. Sternberg, Robert A. Weller, M.P. Baze, Lloyd W. Massengill, Robert A. Reed, Marcus H. Mendenhall, Ronald D. Schrimpf   +7 more
openalex   +2 more sources

Error detection and correction of single event upset (SEU) tolerant latch

IEEE International Symposium on On-Line Testing and Robust System Design, 2012
Norhuzaimin Julai, Alex Yakovlev, A. Bystrov   +2 more
openalex   +2 more sources

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Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7- and 5-nm Bulk FinFET Nodes

IEEE Transactions on Nuclear Science, 2023
Upsets due to low-energy protons are a concern for highly scaled technology nodes as critical charges for storage cells continue to decrease. This work evaluates the single-event upset (SEU) vulnerability of D-flip-flop (FF) and static random access ...
Y. Xiong, N. Pieper, M. Mccurdy, D. Ball, Brian D. Sierwaski, B. Bhuva   +5 more
semanticscholar   +1 more source

Single-Event Upset in 3-D Charge-Trap NAND Flash Memories

IEEE Transactions on Electron Devices, 2022
The effects of single-event upset (SEU) on the threshold voltage ( ${V}_{T}$ ) of a programmed cell in 3-D charge-trap (CT) NAND flash memory have been investigated using 3-D technology-computer-aided design (TCAD) simulations.
Joung-June Park, Jin-woo Han, G. Yoon, D. Go, Donghwi Kim, Jungsik Kim, Jeong-Soo Lee   +6 more
semanticscholar   +1 more source

Single Event Upset Characterization of the Intel Movidius Myriad X VPU and Google Edge TPU Accelerators Using Proton Irradiation

Radiation Effects Data Workshop, 2022
Proton induced SEU cross-sections of the Movidius Myriad X VPU and Google Edge TPU are presented. Upset rates in the space radiation environment are estimated and found to be acceptable for low orbit missions.
Devin P. Ramaswami, D. Hiemstra, Zhi Yang, S. Shi, L. Chen   +4 more
semanticscholar   +1 more source