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Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology

IEEE Transactions on Nuclear Science, 2021
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology.
Yuchong Wang   +10 more
semanticscholar   +1 more source

Single-Event Upset Tolerance Study of a Low-Voltage 13T Radiation-Hardened SRAM Bitcell

IEEE Transactions on Nuclear Science, 2020
The 13T static random-access memory (SRAM) cell was designed as a low-voltage single-event upset (SEU)-tolerant device for ultralow power space applications, showing full read and write functionality down to the subthreshold voltage of 300 mV.
A. Haran   +8 more
semanticscholar   +1 more source

SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFET

IEEE International Reliability Physics Symposium, 2019
This paper proposes soft error immune flip-flop (SEIFF) for mitigating single event upset (SEU) in flip-flops (FFs) and impact of single event transient (SET) in combinational-logic.
T. Uemura   +5 more
semanticscholar   +1 more source

Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

IEEE Transactions on Nuclear Science, 2019
The sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms have been identified to drive the single-event upset (SEU) sensitivity in the last generation of devices: direct ionization for ...
P. Caron   +4 more
semanticscholar   +1 more source

The Robustness of Modern Deep Learning Architectures against Single Event Upset Errors

IEEE Conference on High Performance Extreme Computing, 2018
Neural Networks have revolutionized computer vision and the field has advanced so rapidly that in less than a decade neural networks are on par with human performance at image classification tasks.
Austin P. Arechiga, Alan J. Michaels
semanticscholar   +1 more source

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

IEEE Transactions on Nuclear Science, 2018
Increased heavy ion single-event upset (SEU) sensitivity of radiation-harden 65-nm dual interlocked cell (DICE) static random access memory (SRAM) is observed after total ionizing dose (TID) irradiation.
Qiwen Zheng   +10 more
semanticscholar   +1 more source

Selective triple Modular redundancy (STMR) based single-event upset (SEU) tolerant synthesis for FPGAs

IEEE Transactions on Nuclear Science, 2004
P. Samudrala   +2 more
semanticscholar   +1 more source

Neutron induced single event upset (SEU) testing of commercial memory devices with embedded error correction codes (ECC)

Radiation Effects Data Workshop, 2017
J. Bird   +6 more
semanticscholar   +1 more source

Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM

IEEE Transactions on Nuclear Science, 1985
J. Zoutendyk   +4 more
semanticscholar   +1 more source

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