Results 251 to 260 of about 41,687 (303)

Single Event Upset Testing

1988
Abstract : This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles.
Paul R. Measel, Jerry L. Wert, Dennis L. Oberg, Tommy L. Criswell   +3 more
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Single Event Upset: Experimental

1997
The discussion in this chapter centers around the major single event upset (SEU) simulation sources. Their importance lies in the fact that simulation methods are one of the few means by which microcircuit susceptibility to SEU can be measured. These sources and source types are few in number, principally because of the somewhat unusual properties of ...
George C. Messenger, Milton S. Ash
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Anomalies due to single event upsets

28th Aerospace Sciences Meeting, 1990
The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.
P. Robinson, W. Lee, R. Aguero, S. Gabriel   +3 more
openaire   +1 more source

Single Event Upset Practice

1997
This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
openaire   +1 more source

Laser Simulation of Single Event Upsets

IEEE Transactions on Nuclear Science, 1987
A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a ...
S. P. Buchner, D. Wilson, K. Kang, D. Gill, J. A. Mazer, W. D. Raburn, A. B. Campbell, A. R. Knudson   +7 more
openaire   +1 more source

Non-random single event upset trends

IEEE Transactions on Nuclear Science, 1989
A macroscopic investigation of single-even-upset (SEU) trends for a class of CMOS/NMOS static RAMs exposed to heavy ions and protons has been performed. Analysis of the logical and spatial distribution of upsets as well as individual bit-upset polarity shows the need to consider the effects of peripheral circuitry interactions in understanding and ...
P.T. McDonald, W.J. Stapor, A.B. Campbell, L.W. Massengill   +3 more
openaire   +1 more source

Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
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Single Event Upset Error Rates

1997
This chapter together with Chapter 8 provides the major share of the discussion on the practical aspects of single event upset (SEU). This includes formulas for computing SEU in various particle environments. Section 5.2 discusses SEU calculations for heavy-ion cosmic rays at geosynchronous altitudes and Section 5.3 for Van Allen belt protons.
George C. Messenger, Milton S. Ash
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Single Event Upsets correlated with environment

IEEE Transactions on Nuclear Science, 1994
Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for ...
A.L. Vampola, M. Lauriente, D.C. Wilkinson, J. Allen, F. Albin   +4 more
openaire   +1 more source

Single-event upset in flash memories

IEEE Transactions on Nuclear Science, 1997
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the ...
H.R. Schwartz, D.K. Nichols, A.H. Johnston   +2 more
openaire   +1 more source