Results 11 to 20 of about 1,939,285 (262)
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance [PDF]
Micromachines, 2023 A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
doaj +4 more sources
Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation [PDF]
Micromachines, 2022 A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao +11 more
doaj +4 more sources
A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance [PDF]
MicromachinesIn this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma +8 more
doaj +4 more sources
Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance [PDF]
Radioengineering, 2019 This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model ...
P. Vacula +6 more
doaj +3 more sources
IEEE Access, 2021 A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications.
Moufu Kong +5 more
doaj +1 more source
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
IEEE Journal of the Electron Devices Society, 2022 A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time.
Baoxing Duan +3 more
doaj +1 more source
Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance
Applied Sciences, 2022 Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square and
Jee-Hun Jeong +3 more
doaj +1 more source
Vertical GaN MOSFET Power Devices
Micromachines, 2023 Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices.
Catherine Langpoklakpam +4 more
doaj +1 more source