Results 231 to 240 of about 1,939,285 (262)
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A 50–60 V Class Ultralow Specific on-Resistance Trench Power MOSFET
Chinese Physics Letters, 2012A 50–60 V class ultralow specific on-resistance (Ron,sp) trench power MOSFET is proposed. The structure is characterized by an n+-layer which is buried on the top surface of the p-substrate and connected to the drain n+-region. The low-resistance n+-layer shortens the motion-path in high-resistance n− drift region for the carriers, and therefore ...
Sheng-Dong Hu +7 more
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The Minimum Specific On-Resistance of 3-D Superjunction Devices
IEEE Transactions on Electron Devices, 2023Wentong Zhang +8 more
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On the Specific On-Resistance of High-Voltage and Power Devices
IEEE Transactions on Electron Devices, 2004This paper establishes for the first time closed-form analytical limits from first-principle on the specific on-resistance, versus breakdown voltage with mobility compensation for all the currently known high-voltage device topologies: vertical DMOS, RESURF, super-junction, and thin-film silicon-on-insulator.
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Implementation of fully isolated Low Vgs nLDMOS with low specific on-resistance
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011In this paper, we present a new isolated Low Vgs NLDMOS in 0.35um BCDMOS process. The proposed LDMOS is fully isolated from substrate and has very lower Rsp(specific on-resistance) than other competitors. This device can apply a negative bias to drain and it can be used in AMOLED application.
Choul-Joo Ko +12 more
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Optimized the breakdown voltage and specific on-resistance of double REFURF TMOS
Proceedings. 2005 International Conference on Communications, Circuits and Systems, 2005., 2005In this paper, a novel TMOS with very deep trench double RESURF structure to achieve ultra-low specific on resistance is proposed and optimized. The proposed structure has a deep P column (up to the N/sup +/ drain) under the trench gate electrode. The effects of the depth of P column, widths and doping concentrations of both N column and P column are ...
null Wanjun Chen +3 more
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
Multi-dimensional accumulation gate LDMOS with ultra-low specific on-resistance
Microelectronics Journal, 2023Lijuan Wu +5 more
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A STRAIN‐SPECIFIC INFLUENCE OF PARITY ON RESISTANCE TO HOMOGRAFTS *
Annals of the New York Academy of Sciences, 1960Edward J. Breyere, Morris K. Barrett
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A Rigorous Analysis of Specific ON-resistance for 4H-SiC Superjunction Devices
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2022Juncheng Xiong +7 more
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