Results 261 to 270 of about 5,924,760 (360)

Super‐Refractory Status Epilepticus (SRSE) in a Patient With Compound Heterozygous OPA1 Variants: Case Report and Literature Review

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Super‐Refractory Status Epilepticus (SRSE) is a rare, life‐threatening neurological emergency with unclear etiology in many cases. Mitochondrial dysfunction, often due to disease‐causing genetic variants, is increasingly recognized as a cause, with each gene producing distinct pathophysiological mechanisms.
Pouria Mohammadi, Lara Basovic, Christopher Michael McGraw   +2 more
wiley   +1 more source

Clinical Spectrum and Outcomes of SOX1 Antibody‐Associated Paraneoplastic Neurological Syndromes: A Chinese Cohort Study

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background SOX1 antibody‐positive paraneoplastic neurological syndromes (PNS) exhibit significant population‐specific clinical heterogeneity. While Western cohorts predominantly manifest Lambert‐Eaton myasthenic syndrome (65%–80%), comprehensive clinical characterization and treatment response data in Asian populations remain critically ...
Jin‐Long Ye, Zu‐Ying Kuang, Bo Li, Meng‐Qiu Pan, Li‐Hua Zhou, Yang‐Yang Dai, Si‐Fen Xie, Xian‐Guang Lin, Ye‐Peng Hu, Li‐Hong Jiang, Zhan‐Hang Wang, Wei‐Jing Zhang   +11 more
wiley   +1 more source

HIV-1 subtype-specific drug resistance on dolutegravir-based antiretroviral therapy: protocol for a multicentre longitudinal study (DTG RESIST)

Egger M, Sauermann M, Loosli T, Hossmann S, Riedo S, Beerenwinkel N, Jaquet A, Minga A, Ross JL, Giandhari J, Kouyos R, Lessells R.   +11 more
europepmc   +1 more source

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A New Generation 700 V BCD Technology that Integrates Quadruple-RESURF LDMOS with Best-in-Class Specific On-Resistance

International Symposium on Power Semiconductor Devices and IC's, 2023
A new generation 700 V Bipolar-CMOS-DMOS (BCD) technology is reported in this work, which integrates quadruple-RESURF LDMOS with best-in-class specific on-resistance ($R_{\text{on},\text{sp}}$).
M. Qiao, Dican Hou, Yue Gao, Dingxiang Ma, Jiawei Wang, Bo Zhang   +5 more
semanticscholar   +1 more source

The Minimum Specific On-Resistance of 3-D Superjunction Devices

IEEE Transactions on Electron Devices, 2023
The minimum specific ON-resistance ${R}_{on,min}$ of the three-dimensional superjunction (3-D SJ) device is realized in this article. The electric field of the 3-D SJ is treated as a vector superposition of a 1-D potential field ${E}_{p}$ and a 3-D ...
Wentong Zhang, Kemeng Zhang, Lingying Wu, Yan Sun, Xinkai Guo, Zhuo Wang, M. Qiao, Zhaoji Li, Bo Zhang   +8 more
semanticscholar   +1 more source

A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability

IEEE transactions on device and materials reliability, 2023
In this paper, a new ultra-low specific on-resistance quasi SiC MOSFET is proposed. Compared with the conventional SiC MOSFET, the proposed quasi SiC MOSFET has no problems caused by low channel mobility and gate oxide reliability.
M. Kong, Zeyu Cheng, Zewei Hu, Ning Yu, Bo Yi, Hongqiang Yang   +5 more
semanticscholar   +1 more source

An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques

International Conference on ASIC, 2023
In this article, a 1200V 4H-SiC power laterally diffused metal-oxide-semiconductor (LDMOS) device with ultra-low specific on-resistance is proposed.
M. Kong, Zeyu Cheng, Ning Yu, Rui Jin, Jiaxin Guo, Hongqiang Yang   +5 more
semanticscholar   +1 more source

Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS

International Conference on ASIC, 2023
The tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp) is an important issue for the power device. Baliga’s Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship.
Yufeng Guo, Kemeng Yang, Jing Chen, Man Li, Zhengfei Jiang, Jiafei Yao, Jun Zhang, Maolin Zhang   +7 more
semanticscholar   +1 more source

0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

International Symposium on Power Semiconductor Devices and IC's, 2023
In this work, a new 200V 0.18µm SOI-BCD platform has been developed comprehensively including the wide-SOA n&pLDMOS, low-Ron nLDMOS and LIGBT. It is noted that a ultra-thin N-drift has been skillfully applied below the shallow-trench-isolation (STI ...
Li Lu, Shulang Ma, Jinyu Xiao, Feng Lin, Shuxian Chen, Hong Shao, Sen Zhang, Kui Xiao, Yixin Dai, Zhihan Zhu, Jia-yao Ma, Jiaxing Wei, Long Zhang, Siyang Liu, Weifeng Sun   +14 more
semanticscholar   +1 more source