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International Symposium on Power Semiconductor Devices and IC's, 2022
In this paper, We illustrate three different contact pre-treatment methods during the Ga2O3 SBD fabrication, including F- plasma, organic (Acetone) and Chlorine (HCl) pre-treatment.
Hu Chen +3 more
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In this paper, We illustrate three different contact pre-treatment methods during the Ga2O3 SBD fabrication, including F- plasma, organic (Acetone) and Chlorine (HCl) pre-treatment.
Hu Chen +3 more
semanticscholar +1 more source
AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance
IEEE Transactions on Electron Devices, 2022N-p-n AlGaN/GaN heterojunction bipolar transistors (HBTs) on sapphire substrates with high current gain $\beta $ of 129, low specific ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}{)}$ of 0.28 $\text{m}\sf \Omega \cdot $ cm2 and ...
Lian Zhang +8 more
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IEEE Transactions on Electron Devices, 2022
The optimization of drift region specific ON-resistance ( ${R} _{on,sp}$ ) for superjunction (SJ) MOSFETs with three-dimensional (3-D) and insulator-pillar ( ${i}$ -pillar) concepts is proposed and compared with the two-dimensional conventional SJ (2-D C-
Haimeng Huang +9 more
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The optimization of drift region specific ON-resistance ( ${R} _{on,sp}$ ) for superjunction (SJ) MOSFETs with three-dimensional (3-D) and insulator-pillar ( ${i}$ -pillar) concepts is proposed and compared with the two-dimensional conventional SJ (2-D C-
Haimeng Huang +9 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices, 2022
In order to reduce the specific ON resistance ( $\text{R}_{\mathbf {{ \mathrm{\scriptscriptstyle ON}},sp}}$ ) of power device in the drift region, the folded accumulation lateral double-diffused MOSFET (FALDMOS) is manufactured and analyzed in this ...
B. Duan +3 more
semanticscholar +1 more source
In order to reduce the specific ON resistance ( $\text{R}_{\mathbf {{ \mathrm{\scriptscriptstyle ON}},sp}}$ ) of power device in the drift region, the folded accumulation lateral double-diffused MOSFET (FALDMOS) is manufactured and analyzed in this ...
B. Duan +3 more
semanticscholar +1 more source
An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process
International Symposium on Power Semiconductor Devices and IC's, 2022This paper proposes a 200V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) for voltage extension of a 0.18µm Bipolar-CMOS-DMOS (BCD) process.
M. Qiao +10 more
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Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET
International Symposium on Power Semiconductor Devices and IC's, 2021We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low RonA of 3.3 mΩcm2 at room temperature (RT) and 6.2 mΩcm2 at 175 °C.
Masakazu Baba +5 more
semanticscholar +1 more source
International Symposium on Power Semiconductor Devices and IC's, 2021
The impact of cell size and JFET width reduction on static and dynamic device characteristics is investigated in 1.2-kV-class Schottky barrier diode (SBD)-embedded SiC metal–oxide–semiconductor field effect transistors (MOSFETs).
H. Kono +7 more
semanticscholar +1 more source
The impact of cell size and JFET width reduction on static and dynamic device characteristics is investigated in 1.2-kV-class Schottky barrier diode (SBD)-embedded SiC metal–oxide–semiconductor field effect transistors (MOSFETs).
H. Kono +7 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices, 2021
An accumulation-mode lateral double-diffused MOSFET (LDMOS) is proposed and its mechanism is investigated in this article. To optimize the tradeoff between breakdown voltage (BV) and specific ON-resistance ( ${R}_{\text {on,sp}}$ ), the idea of ...
Yandong Wang +3 more
semanticscholar +1 more source
An accumulation-mode lateral double-diffused MOSFET (LDMOS) is proposed and its mechanism is investigated in this article. To optimize the tradeoff between breakdown voltage (BV) and specific ON-resistance ( ${R}_{\text {on,sp}}$ ), the idea of ...
Yandong Wang +3 more
semanticscholar +1 more source
International Symposium on Power Semiconductor Devices and IC's, 2021
In power devices, the resistance of the drift region becomes a dominant portion of the total device. In order to reduce the on resistance, the folded accumulation lateral double-diffused MOSFET (FALDMOS) is proposed and manufactured.
Yandong Wang, B. Duan, Yintang Yang
semanticscholar +1 more source
In power devices, the resistance of the drift region becomes a dominant portion of the total device. In order to reduce the on resistance, the folded accumulation lateral double-diffused MOSFET (FALDMOS) is proposed and manufactured.
Yandong Wang, B. Duan, Yintang Yang
semanticscholar +1 more source
Nonhost resistance genes and race-specific resistance
Trends in Microbiology, 1993Apart from physical barriers, plants have two major types of defense against potential pathogens. In 'race-specific' resistance, plants match single mendelian resistance genes with the 'avirulence' genes possessed by races of a pathogen. Plants also employ the more complex and evolutionarily more robust system of 'nonhost resistance' against a broad ...
L A, Hadwiger, D E, Culley
openaire +2 more sources