Results 281 to 290 of about 5,924,760 (360)
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Specific DDT-Resistance in Houseflies
Nature, 1957Two strains of houseflies (Musca domestica L.) have been derived by selection for a number of generations from a DDT-susceptible colony which originated from wild flies collected in 1939. The colony had been mass-reared in the laboratory for fourteen years without exposure to insecticides. Selection was by two different methods.
R W, KERR +3 more
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Generalized and tissue specific glucocorticoid resistance
Molecular and Cellular Endocrinology, 2021Glucocorticoids (GCs) are steroid hormones that influence several physiologic functions and are among the most frequently prescribed drugs worldwide. Resistance to GCs has been observed in the context of the familial generalized GC resistance (Chrousos' syndrome) or tissue specific GC resistance in chronic inflammatory states.
Clarissa Silva Martins +1 more
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IEEE Transactions on Electron Devices, 2020
This article proposes a MATLAB-based optimization methodology of the drift region specific ON-resistance ( ${R}_{on,sp}$ ) both for the high-permittivity ( $\text{H}{k}$ ) MOSFETs and superjunction (SJ) MOSFETs with design parameters expressed by ...
Haimeng Huang +6 more
semanticscholar +1 more source
This article proposes a MATLAB-based optimization methodology of the drift region specific ON-resistance ( ${R}_{on,sp}$ ) both for the high-permittivity ( $\text{H}{k}$ ) MOSFETs and superjunction (SJ) MOSFETs with design parameters expressed by ...
Haimeng Huang +6 more
semanticscholar +1 more source
Velocity Specificity of Resistance Training
Sports Medicine, 1993Velocity specificity of resistance training has demonstrated that the greatest strength gains occur at or near the training velocity. There is also evidence that the intent to make a high speed contraction may be the most crucial factor in velocity specificity.
D G, Behm, D G, Sale
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Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance
International Symposium on Power Semiconductor Devices and IC's, 2020This paper presents the silicon demonstration of a novel Trench MOSFET with ultra-low specific on-resistance Ron*A. With drain and source contact placement at the top silicon surface, our device combines the benefits of vertical current flow as leveraged
S. Mehrotra +7 more
semanticscholar +1 more source
A 0. 25μm700V BCD Technology with Ultra-low Specific On-resistance SJ-LDMOS
International Symposium on Power Semiconductor Devices and IC's, 2020In this paper, a 0. 25 μm 700 V Bipolar-CMOSDMOS (BCD) process platform is reported, which integrates the super junction lateral double-diffused metal–oxide semiconductor (SJ-LDMOS) with ultra-low specific onresistance $R_{\mathrm{o}\mathrm{n},\mathrm{s}\
Nailong He +5 more
semanticscholar +1 more source
Specific On-Resistance Reduction for the LDMOS Using Separated Composite Dielectric Trenches
IEEE Transactions on Electron DevicesIn this article, a novel lateral double-diffused metal oxide semiconductor (LDMOS) with separated composite dielectric trenches (SCDT LDMOS) is proposed. The main features of SCDT LDMOS are that the depths of gate trench and lateral separated trenches in
Jiafei Yao +9 more
semanticscholar +1 more source
Enhanced Theoretical Lower Limit for the Specific On-Resistance of a Silicon Balanced Superjunction
IEEE Transactions on Electron DevicesWe propose a simple yet highly effective analytical model for the electric field distribution along the critical path in a balanced superjunction (SJ) power device. Using this electric field model for silicon SJ devices, we relate the breakdown voltage (
Member Ieee Vijaya Kumar Gurugubelli +2 more
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International Symposium on Power Semiconductor Devices and IC's
A novel 16V Lateral Double-diffused MOSFET (LDMOS) based on a standard 0.18 $\mu\mathrm{m}$ BCD platform is reported in this work, which uses grid-gate technology to realize the 35V off-state breakdown voltage $(\text{BV}_{\mathrm{O}\mathrm{F}\mathrm{F}})
Jiawei Wang +4 more
semanticscholar +1 more source
A novel 16V Lateral Double-diffused MOSFET (LDMOS) based on a standard 0.18 $\mu\mathrm{m}$ BCD platform is reported in this work, which uses grid-gate technology to realize the 35V off-state breakdown voltage $(\text{BV}_{\mathrm{O}\mathrm{F}\mathrm{F}})
Jiawei Wang +4 more
semanticscholar +1 more source