Results 31 to 40 of about 1,939,285 (262)

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

IEEE Access, 2020
In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n- GaN drift layer, the p+ GaN layer and the trench gate are designed and optimized systematically ...
Shuang Liu, Xiufeng Song, Jincheng Zhang, Shenglei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Integratable trench MOSFET with ultra‐low specific on‐resistance

Electronics Letters, 2015
A novel integratable metal–oxide–semiconductor field‐effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS–TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N ‐drift doping concentration (
Chao Yin, Jie Wei, Kun Zhou, Xiaorong Luo   +3 more
openaire   +1 more source

Numerical Analysis of the LDMOS With Side Triangular Field Plate

IEEE Journal of the Electron Devices Society, 2019
A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp). The main feature of the novel LDMOS is the STFPs at
Jiafei Yao, Yu Deng, Yufeng Guo, Zhenyu Zhang, Jun Zhang, Maolin Zhang   +5 more
doaj   +1 more source

Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

IEEE Journal of the Electron Devices Society, 2020
A SiC trench MOSFET with an enhanced vertical RESURF effect is proposed and analyzed in this article. The device features a deep oxide trench surrounded by a P-type doping layer at the source-side. With the assistant depletion effect of the P-type layer,
Han Yang, Shengdong Hu, Shenglong Ran, Jian'an Wang, Tao Liu   +4 more
doaj   +1 more source

Effects of climbing- and resistance-training on climbing-specific performance: a systematic review and meta-analysis

Biology of Sport, 2022
The objective of this systematic review and meta-analysis was to examine the effects of climbing and climbing-and-resistance-training on climbing performance, and strength and endurance tests.
Nicolay Stien, Amund Riiser, Matthew P. Shaw, Atle H. Saeterbakken, Vidar Andersen   +4 more
doaj   +1 more source

A method to calculate the voltage-current characteristics of [PDF]

Maejo International Journal of Science and Technology, 2009
The voltage-current characteristics of the Schottky barrier diode defined by the diode equation can be obtained by using iteration method and a C++ program.
Rajneesh Talwar
doaj  

Reducing the specific on-resistance for a trench-gate-integrated SOI LDMOS by using the double silicon drift layers

Results in Physics, 2020
Double silicon drift layers are used to reduce the specific on-resistance (Ron,sp) for a trench-gate-integrated lateral double-diffused MOSFET (DDL TG LDMOS) based on SOI technology in this paper.
Yuan Wang, Shengdong Hu, Chang Liu, Jian'an Wang, Han Yang, Shenglong Ran, Jie Jiang, Gang Guo   +7 more
doaj   +1 more source

Impacts of operating conditions on specific cake resistance in dead-end microfiltration process

Proceedings of the Mongolian Academy of Sciences, 2023
In the present work, the fouling behavior and the corresponding specific cake resistance of polyethersulfone microfiltration membrane fouled by using different solutions (bovine serum albumin solution, sodium alginate solution, humic acid and activated ...
Natsagdorj Khaliunaa, Wang Zhan, Xi Wang, Tungalagtamir Bold   +3 more
doaj   +1 more source

A PRSZT Registry Analysis of Prognostic Factors Influencing Survival and Relapse Rates After Second Allogeneic Hematopoietic Stem Cell Transplantation in Pediatric Acute Lymphoblastic Leukemia

Pediatric Blood &Cancer, EarlyView.
ABSTRACT A second allogeneic (allo‐)hematopoietic stem cell transplantation (HSCT2) is a potential curative option for pediatric patients with acute lymphoblastic leukemia (ALL) following relapse after first allogeneic transplantation (HSCT1), but its efficacy is limited by high relapse rates and transplant‐related toxicity in highly pretreated ...
Ava Momm, Imme Haubitz, Rita Beier, Martin Zimmermann, Andrej Lissat, Peter Bader, Matthias Eyrich, Jan‐Henning Klusmann, Matthias Wölfl, Paul‐Gerhardt Schlegel, Verena Wiegering   +10 more
wiley   +1 more source

Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate

IEEE Access
In this article, enhancement-mode (E-mode) operation is achieved by employing a trench gate on the $\beta $ -Ga2O3 current aperture vertical MOSFETs via Sentaurus TCAD simulation.
Xiaoqing Chen, Feng Li, Herbert Hess
doaj   +1 more source