Results 41 to 50 of about 370,378 (203)
Spectroscopic ellipsometry utilizing frequency division multiplexed lasers
Spectroscopic ellipsometry (SE), which measures the thickness of thin films in a non-contact way with an accuracy of angstroms, has been widely used for optical metrology. Several types of SE are available both commercially and in research, although they
Jongkyoon Park, Yong Jai Cho, Won Chegal
doaj +1 more source
S.433-437Silica xerogel films with low dielectric constant were prepared by means of a sol-gel spin-coating method using different aging and hydrophobisation conditions.
Himcinschi, C. +5 more
core +1 more source
Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu +12 more
wiley +1 more source
We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to ...
A. A. Ogwu +2 more
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Hemagglutinin precomplexation with antibodies (Abs) results in broad valency distributions, though it increases the total avidity from mM to nM to high nM. The valency distribution and the orientation of multivalent HA‐Ab complexes determine the extent of binding to different types of assays, whether the receptors are displayed in 2D or 3D.
Daniel Y. E. L. Tambuwun +8 more
wiley +1 more source
The optical and electrical properties of terbium(III) bis(phthalocyanine) (TbPc2) films on cobalt substrates were studied using variable angle spectroscopic ellipsometry (VASE) and current sensing atomic force microscopy (cs-AFM).
Peter Robaschik +11 more
doaj +1 more source
Expanded beam (macro-imaging) ellipsometry
S.2730-2736Our aim was to make possible to use spectroscopic ellipsometry for mapping purposes during one measuring cycle (minimum one rotation period of polarizer or analyzer) on many sample points.
Petrik, P. +6 more
core +1 more source
Wafer‐Scale Top‐Down Patterning of Metal Halide Perovskites
Wafer‐scale patterning of metal halide perovskite films is demonstrated on 150 mm substrates using a chemically amplified resist, polymethyl methacrylate (CAR‐PMMA) and a single reactive ion etching step. The streamlined process preserves film luminescence while defining submicrometer features across the full wafer, enabling dense, scalable integration
Federico Fabrizi +7 more
wiley +1 more source
Low‐index and low‐loss vdW muscovite represents an emerging robust dielectric platform for the creation of next‐generation all‐vdW nanophotonic architectures. Its utilization as a low‐index building‐block in all‐vdW multilayers enables extreme optical contrast when paired with MoS2, paving the way to the realization of few‐layer ultrathin DBS ...
Meri H. Hayrapetyan +10 more
wiley +1 more source
In this paper, we present a method for retrieving the optical properties of a nano-designed TiN/AlN composite dielectric, using spectroscopic ellipsometry for experimental measurements and wave optics simulations for numerical analysis. Composite cermets
Mohamed El Hachemi +2 more
doaj +1 more source

