Results 71 to 80 of about 26,661 (230)

Dual-Optical-Comb Spectroscopic Ellipsometry [PDF]

Conference on Lasers and Electro-Optics, 2016
We proposed spectroscopic ellipsometry employing dual-optical-comb spectroscopy. We demonstrated the ellipsometric evaluation of a high-order quarter waveplate and a SiO 2 thin film standard with the spectral resolution of 48 MHz.
Takeo Minamikawa, Yi-Da Hsieh, Kyuki Shibuya, Yoshiki Kaneoka, Sho Okubo, Hajime Inaba, Yasuhiro Mizutani, Takeshi Yasui, Tetsuo Iwata   +8 more
openaire   +1 more source

Surface Passivation of HgTe Nanocrystals Enabling EG/2 Open‐Circuit Voltage and Their Coupling to Dielectric Cavity for Narrow Detection

Advanced Materials, EarlyView.
This article explores how the integration of a thin shell, combined with optimized surface chemistry, enables the design of photodiodes based on short‐wave infrared HgTe nanocrystals. These photodiodes achieve an open‐circuit voltage greater than half the optical bandgap, which drastically reduces dark current. The article also explores the integration
Albin Colle, Clement Gureghian, Dario Mastrippolito, Mariarosa Cavallo, Jiho Roh, Marco Paye, Tommaso Gemo, Diogo Almeida, Adrien Khalili, Yoann Prado, Xavier Lafosse, Sandrine Ithurria, Mathieu G. Silly, Pavel Dudin, James K. Utterback, José Avila, Debora Pierucci, Emmanuel Lhuillier   +17 more
wiley   +1 more source

Study on the Electrodeposition of Lead with In-Situ Ellipsometry

International Journal of Electrochemical Science, 2015
In this study, we applied the in situ spectroscopic ellipsometry (SE) technology to the electrochemical test, and combined with cyclic voltammetry (CV) mainly researched underpotential-deposited (UPD) of Pb on polycrystalline Cu.
Xiaolei Ren, Shengtao Zhang, Lei Guo, Wenpo Li, Jinglei Lei, Yanru Wang   +5 more
doaj   +1 more source

Rutile Without Substrate Limitations: Top‐Interface‐Driven Crystallization of TiO2

Advanced Materials, EarlyView.
A RuO2 upper layer acts as a removable crystallization template that triggers rutile TiO2 formation from the top interface, independent of the underlying substrate. This top‐interface‐driven crystallization mechanism enables rutile growth even on amorphous ZrO2/TiN, offering a substrate‐agnostic route to high‐k dielectrics compatible with DRAM process ...
Jihoon Jeon, Jongseo Kim, Seungwan Ye, Seong Keun Kim   +3 more
wiley   +1 more source

Optical Properties of Bismuth Nanostructures Towards the Ultrathin Film Regime

, 2019
Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n near 10) and a negative ultraviolet visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing for
Deeb, Claire, Rebollar, Esther, Serna, Rosalia, Toudert, Johann   +3 more
core   +1 more source

A Comparative Study on Early‐Stage Icing Evaluation Techniques for Passive Ice Protection Systems

Advanced Materials Interfaces, EarlyView.
This study addresses the lack of standardized methodologies for evaluating the early‐stage icing performance of passive ice protection systems. A unified experimental protocol is proposed and applied to representative hydrophilic and hydrophobic surfaces under controlled conditions.
Lorenzo Facco, Elena Colusso, Marco Tancon, Alessandro Martucci, Riccardo Parin   +4 more
wiley   +1 more source

Optical properties of graphene film growing on a thin copper layer

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements.
T.S. Rozouvan
doaj   +1 more source

Spectroscopic Ellipsometry Studies and Temperature Behaviour of the Dielectric Function of TlInS2 Layered Crystal [PDF]

Журнал нано- та електронної фізики, 2017
Real and imaginary parts of the dielectric function of TlInS2 single crystals in the spectral range from 1 to 5 eV were determined within a temperature range of 133–293 K from spectroscopic ellipsometry measurements.
O.O.В Gomonnai, O.В Gordan, P.P.В Guranich, P.В Huranich, A.G.В Slivka, A.V.В Gomonnai, D.R.T.В Zahn   +6 more
doaj   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

Advanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim, Sung Kyu Jang, Jihun Kim, Jong‐Hyun Choi, Ji‐Beom Yoo, Hyun‐Mi Kim, Seul‐Gi Kim, Hyeongkeun Kim   +7 more
wiley   +1 more source

Ellipsometry data analysis and ellipsometric spectra of complex materials [PDF]

Tehnika, 2014
Optical and structural properties of materials can be characterized by spectroscopic ellipsometry which represents an experimental technique that measures polarized light reflected from a material surface.
Stojanović Danka B., Radovanović Jelena V., Milanović Vitomir B., Rakočević Zlatko Lj.   +3 more
doaj   +1 more source