Results 51 to 60 of about 3,266 (171)

Spintronic Bayesian Hardware Driven by Stochastic Magnetic Domain Wall Dynamics

Advanced Science, EarlyView.
Magnetic Probabilistic Computing (MPC) utilizes intrinsic stochastic dynamics in domain walls to establish a hardware foundation for uncertainty‐aware artificial intelligence. Thermally driven domain‐wall fluctuations, voltage‐controlled magnetic anisotropy, and TMR readout enable fully electrical, tunable probabilistic inference.
Tianyi Wang, Bingqian Dai, Shijie Xu, Kin Wong, Yaochen Li, Yang Cheng, Qingyuan Shu, Haoran He, Puyang Huang, Hanshen Huang, Xixiang Zhang, Kang L. Wang   +11 more
wiley   +1 more source

Spin-orbit-torque driven magnetoimpedance in Pt-layer/magnetic-ribbon heterostructures

, 2017
When a flow of electron passes through a paramagnetic layer with strong spin-orbit-coupling such as platinum (Pt), a net spin current is produced via spin Hall effect (SHE).
Hajiali, M. R., Hamdi, M., Jamilpanah, L., Mohseni, S. Majid., Mohseni, S. Morteza, Roozmeh, S. E.   +5 more
core   +1 more source

Nonrelativistic Spin Current Generated Unconventional Spin Hall Magnetoresistance in Altermagnetic RuO2

Advanced Science, EarlyView.
It is reported that the unconventional spin Hall magnetoresistance generated from nonrelativistic spin currents in RuO2 is capable of accurately detecting spin current polarization and disentangling the T̂$\hat{T}$‐odd and T̂$\hat{T}$‐even components of a spin current.
Chang Pan, Shuai Hu, Fanli Yang, Dongchao Yang, Wei Zhu, Jianwei Zhang, Weijia Fan, Zhong Shi, Liqing Pan, Shiming Zhou, Xuepeng Qiu   +10 more
wiley   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Spin-orbit torques acting upon a perpendicularly-magnetized Py layer

, 2018
We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO capping layer.
Buhrman, Robert A., Chen, Tian-Yue, Ou, Yongxi, Pai, Chi-Feng, Tsai, Tsung-Yu   +4 more
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Field-free deterministic ultra fast creation of skyrmions by spin orbit torques

, 2017
Magnetic skyrmions are currently the most promising option to realize current-driven magnetic shift registers. A variety of concepts to create skyrmions were proposed and demonstrated. However, none of the reported experiments show controlled creation of
A Brataas, A Fert, A Hrabec, A Rosch, A Vansteenkiste, Bastian Pfau, Benjamin Krüger, C Moreau-Luchaire, Christian M. Günther, Dieter Engel, F Büttner, F Hellman, Felix Büttner, Geoffrey S. D. Beach, Ivan Lemesh, J Iwasaki, J Sampaio, J Sinova, Jan Geilhufe, Jens Viefhaus, K Garello, K Litzius, K-F Huang, K-S Lee, L Liu, Lucas Caretta, M Schott, Michael Schneider, N Nagaosa, N Romming, Piet Hessing, S Eisebitt, S Rohart, S Woo, SSP Parkin, Stefan Eisebitt, W Jiang, W Jiang, W Koshibae, W Legrand, X Yu, Y Zhou   +41 more
core   +2 more sources

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Spin-orbit torques due to extrinsic spin-orbit scattering of topological insulator surface states: out-of-plane magnetization

JPhys Materials, 2022
The origins of the spin-orbit torque (SOT) at ferromagnet/topological insulator interfaces are incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect due to the surface states in the presence of a scalar scattering ...
Mohsen Farokhnezhad, Reza Asgari, Dimitrie Culcer   +2 more
doaj   +1 more source

Self-current induced spin-orbit torque in FeMn/Pt multilayers

, 2016
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current.
Wu, Yihong, Xu, Baoxi, Xu, Yanjun, Yang, Yumeng, Yao, Kui   +4 more
core   +1 more source