Results 21 to 30 of about 2,552 (174)

FPGA-based fault injection design for 16K-point FFT processor

The Journal of Engineering, 2019
There are a number of satellites working in the harsh space environment. The charged particles in space may strike the electron devices causing the undesired influences, such as soft errors in memory devices or permanent damage in hardware circuits ...
Chuang-An Mao, Yu Xie, Xin Wei, Yi-Zhuang Xie, He Chen   +4 more
doaj   +1 more source

Design of Static Random-Access Memory Cell for Fault Tolerant Digital System

Applied Sciences, 2022
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj   +1 more source

Design of half-select free 12T SRAM cell with high performance for health care applications

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Static Random Access Memory (SRAM) plays a crucial role in applications related to health like Body Area Networks (BANs) which require increased battery lives for the sensor nodes in BANs.
Manoj Kumar R․, Sai Susmitha Naidu N․   +1 more
doaj   +1 more source

Radiation hardened 12T SRAM cell with improved writing capability for space applications

Memories - Materials, Devices, Circuits and Systems, 2023
This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma, Debabrata Mondal, Ambika Prasad Shah   +2 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Journal of Nanotechnology, 2020
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan   +3 more
doaj   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Ultra-low power SRAM and SRAM based PUF design [PDF]

, 2020
With the recent development of portable devices and wearable technology, the requirements of long battery life-time, ultra-low power consumption and low cost in system-on-a-chip (SoC) are becoming increasingly significant. However, the aggressive CMOS technology which integrates with more devices and larger capacitor cache cause high power density. As
openaire   +2 more sources