Results 41 to 50 of about 55,876 (211)
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang +20 more
wiley +1 more source
Design of the two-tier MUX in 65 nm SRAM(65 nm SRAM两级多路选择器的设计)
为提高SRAM的存取速度,节省芯片面积,抑制工艺波动的影响,在对SRAM多路选择架构研究基础上改进了一种应用于65 nm SRAM的多路选择架构,建立了此多路选择架构的小信号模型.采用蒙特卡罗仿真导出了位线传输管的最小尺寸限制.同时,提出一种简单的估算电路节点时间常数的方法,用于从理论上分析改进的两级架构相对于传统的一级架构的优势,即当两级架构的两级译码的特征数字相近时可取得最佳性能,且灵敏放大器的特征数字越大时两级架构的优势越明显.仿真验证的结果显示,在面积几乎不变、控制复杂性几乎不增加前提下 ...
ZHANGQiang(张强), WUXiao-bo(吴晓波)
doaj +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Sram v doživljanju pacienta in terapevta – psihoterapevtska obravnava sramu
Bulimija je tako kot druge motnje hranjenja, predvsem motnja v doživljanju sramu. Predstavljene tri pacientke sebe značilno doživljajo kot brezvredne, ogabne človeške kreature, ki so nemočno ujete v odvisnost od hrane.
Meta Kramar
doaj +1 more source
Thin Rechargeable Batteries for CMOS SRAM Memory Protection [PDF]
New rechargeable battery technology is described and compared with classical primary battery back-up of SRAM PC cards. Thin solid polymer electrolyte cells with the thickness of TSOP memory components (1 mm nominal, 1.1 mm max) and capacities of 14 mAh ...
Crouse, Dennis N.
core +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
doaj +1 more source
Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications
Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue ...
M. V. Nageswara Rao +6 more
doaj +1 more source
Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen +4 more
wiley +1 more source
Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have led to a ...
Jaiswal, Akhilesh +4 more
core +1 more source

