Results 21 to 30 of about 13,883 (233)
Psychopathy and the positive and negative affect schedule (PANAS) as the predictors of totalitarian political ideology [PDF]
Psihološka Istraživanja, 2020 The present study has two goals. The first goal is to investigate whether a high need for the government-imposed security and social regulation, the acceptance of living in a dictatorship, the limitations and denial of individual freedom and the support ...
Šram Zlatko
doaj
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
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Journal of Low Power Electronics and Applications, 2017 In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at low supply voltages with high
Pooran Singh, Santosh Kumar Vishvakarma
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A Robust, Low-Cost and Secure Authentication Scheme for IoT Applications
Cryptography, 2020 The edge devices connected to the Internet of Things (IoT) infrastructures are increasingly susceptible to piracy. These pirated edge devices pose a serious threat to security, as an adversary can get access to the private network through these non ...
Md Jubayer al Mahmod, Ujjwal Guin
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Radiation hardened 12T SRAM cell with improved writing capability for space applications
Memories - Materials, Devices, Circuits and Systems, 2023 This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma +2 more
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March CRF: an Efficient Test for Complex Read Faults in SRAM Memories [PDF]
, 2007 In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic ...
Luigi Dilillo +5 more
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Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
Journal of Nanotechnology, 2020 The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
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Online and Offline BIST in IP-Core Design [PDF]
, 2001 This article presents an online and offline built-in self-test architecture implemented as an SRAM intellectual-property core for telecommunication applications.
Di Natale, Giorgio +5 more
core +1 more source
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]
Journal of Systemics, Cybernetics and Informatics, 2018 The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov +2 more
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ETRI Journal, 2023 In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout ...
Sandip Bhattacharya +8 more
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