UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]
, 2005 Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K. +9 more
core +1 more source
Psychopathy and the positive and negative affect schedule (PANAS) as the predictors of totalitarian political ideology [PDF]
Psihološka Istraživanja, 2020 The present study has two goals. The first goal is to investigate whether a high need for the government-imposed security and social regulation, the acceptance of living in a dictatorship, the limitations and denial of individual freedom and the support ...
Šram Zlatko
doaj
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
core +1 more source
A Robust, Low-Cost and Secure Authentication Scheme for IoT Applications
Cryptography, 2020 The edge devices connected to the Internet of Things (IoT) infrastructures are increasingly susceptible to piracy. These pirated edge devices pose a serious threat to security, as an adversary can get access to the private network through these non ...
Md Jubayer al Mahmod, Ujjwal Guin
doaj +1 more source
Radiation hardened 12T SRAM cell with improved writing capability for space applications
Memories - Materials, Devices, Circuits and Systems, 2023 This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma +2 more
doaj +1 more source
Journal of Low Power Electronics and Applications, 2017 In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at low supply voltages with high
Pooran Singh, Santosh Kumar Vishvakarma
doaj +1 more source
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj +1 more source
Online and Offline BIST in IP-Core Design [PDF]
, 2001 This article presents an online and offline built-in self-test architecture implemented as an SRAM intellectual-property core for telecommunication applications.
Di Natale, Giorgio +5 more
core +1 more source
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]
Journal of Systemics, Cybernetics and Informatics, 2018 The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov +2 more
doaj
Design of half-select free 12T SRAM cell with high performance for health care applications
e-Prime: Advances in Electrical Engineering, Electronics and EnergyStatic Random Access Memory (SRAM) plays a crucial role in applications related to health like Body Area Networks (BANs) which require increased battery lives for the sensor nodes in BANs.
Manoj Kumar R․ +1 more
doaj +1 more source