Results 21 to 30 of about 13,836 (232)

Analysis of read speed latency in 6T-SRAM cell using multi-layered graphene nanoribbon and cu based nano-interconnects for high performance memory circuit design

open access: yesETRI Journal, 2023
In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout ...
Sandip Bhattacharya   +8 more
doaj   +1 more source

Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

open access: yesJournal of Low Power Electronics and Applications, 2017
In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at low supply voltages with high
Pooran Singh, Santosh Kumar Vishvakarma
doaj   +1 more source

Psychopathy and the positive and negative affect schedule (PANAS) as the predictors of totalitarian political ideology [PDF]

open access: yesPsihološka Istraživanja, 2020
The present study has two goals. The first goal is to investigate whether a high need for the government-imposed security and social regulation, the acceptance of living in a dictatorship, the limitations and denial of individual freedom and the support ...
Šram Zlatko
doaj  

Online and Offline BIST in IP-Core Design [PDF]

open access: yes, 2001
This article presents an online and offline built-in self-test architecture implemented as an SRAM intellectual-property core for telecommunication applications.
Di Natale, Giorgio   +5 more
core   +1 more source

Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]

open access: yesJournal of Systemics, Cybernetics and Informatics, 2018
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov   +2 more
doaj  

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

open access: yesJournal of Nanotechnology, 2020
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy   +3 more
doaj   +1 more source

Design of half-select free 12T SRAM cell with high performance for health care applications

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy
Static Random Access Memory (SRAM) plays a crucial role in applications related to health like Body Area Networks (BANs) which require increased battery lives for the sensor nodes in BANs.
Manoj Kumar R․   +1 more
doaj   +1 more source

Radiation hardened 12T SRAM cell with improved writing capability for space applications

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma   +2 more
doaj   +1 more source

Low-power adiabatic 9T static random access memory

open access: yesThe Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi   +3 more
doaj   +1 more source

Design of Static Random-Access Memory Cell for Fault Tolerant Digital System

open access: yesApplied Sciences, 2022
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj   +1 more source

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