Results 11 to 20 of about 13,836 (232)

Radiation tolerant capacitor-SRAM without area overhead

Nuclear Engineering and Technology
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon   +4 more
doaj   +2 more sources

Performance Analysis Of SRAM and Dram in Low Power Application [PDF]

E3S Web of Conferences, 2023
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S., Padmanaban D., PraveenKumar G., Sahu Satendra, Umida Masharipova, Yokeshwaran R.   +5 more
doaj   +1 more source

Performance analysis of OTFT-based SRAM topologies

Memories - Materials, Devices, Circuits and Systems, 2023
In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance.
Taniza Marium, S.M. Ishraqul Huq, Oli Lowna Baroi, Md. Shaikh Abrar Kabir, Satyendra N. Biswas   +4 more
doaj   +1 more source

Embedded intelligent SRAM [PDF]

Proceedings of the 40th conference on Design automation - DAC '03, 2003
Many embedded systems use a simple pipelined RISC processor for computation and an on-chip SRAM for data storage. We present an enhancement called Intelligent SRAM (ISRAM) that consists of a small computation unit with an accumulator that is placed near the on-chip SRAM. The computation unit can perform operations on two words from the same SRAM row or
Prabhat Jain, G. Edward Suh, Srinivas Devadas   +2 more
openaire   +1 more source

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells [PDF]

, 2005
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has ...
Samsudin, K., Cheng, B., Brown, A.R., Asenov, A., Roy, S.   +4 more
core   +1 more source

Timing speculative SRAM

2017 IEEE International Symposium on Circuits and Systems (ISCAS), 2017
Static Random Access Memories (SRAMs) are considered a major bottleneck in high performance System-on-Chip (SoC) design and there is a large demand for high performance SRAMs with minimal energy consumption. Time speculation techniques such as Razor ease timing guardbands to improve performance or reduce energy consumption.
Elnaz Ebrahimi 0001, Matthew R. Guthaus, Jose Renau   +2 more
openaire   +3 more sources

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K., Cheng, B., Brown, A.R., Asenov, A., Roy, S.   +4 more
core   +1 more source

The impact of random doping effects on CMOS SRAM cell [PDF]

, 2004
The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs.
Cheng, B., Asenov, A., Roy, S.
core   +1 more source

Občutljivost za sram in njeni korelati pri parih

Psihološka Obzorja, 2010
Raziskava preučuje povezanost med tremi lestvicami instrumenta TOSCA-3 (občutljivost za sram, občutljivost za krivdo ter eksternalizacija) ter stresom, depresivnostjo, strahom pred intimo in stilom navezanosti pri 68 heteroseksualnih parih v trajnih ...
Tomaž Erzar, Matej Torkar, Katarina Kompan Erzar   +2 more
doaj   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo, Scionti, A., Alessandro Savino, Alberto Scionti, Paolo Prinetto, Prinetto, Paolo Ernesto, Di Carlo, Stefano, Savino, Alessandro   +7 more
core   +1 more source