Results 31 to 40 of about 17,373 (224)
Low-power adiabatic 9T static random access memory
The Journal of Engineering, 2014 In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi +3 more
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Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
Journal of Nanotechnology, 2020 The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
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Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications
Journal of Electrical and Computer Engineering, 2023 Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, and this trend is expected to continue ...
M. V. Nageswara Rao +6 more
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ETRI Journal, 2023 In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout ...
Sandip Bhattacharya +8 more
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Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity
IEEE Journal of the Electron Devices Society, 2020 The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) <; 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell ...
Yuri Hong, Yejoo Choi, Changhwan Shin
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A Study on Conventional SRAM and Adiabatic SRAM
, 2017 Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based integrated circuit. It is made in many different types and technologies. Most modern semiconductor memory devices are implemented allowing random access, which means that it takes the same amount of time to access any memory ...
Dhanasekar, J. +2 more
openaire +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Células SRAM de ultra baixa tensão com polarização de substrato [PDF]
, 2008 Dissertação (Mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaEsta dissertação visa o estudo da célula SRAM de 6 transistores, utilizando tecnologia CMOS convencional, operando em ...
Lima, Alessandro de Souza
core
Sram v doživljanju pacienta in terapevta – psihoterapevtska obravnava sramu
Psihološka Obzorja, 2010 Bulimija je tako kot druge motnje hranjenja, predvsem motnja v doživljanju sramu. Predstavljene tri pacientke sebe značilno doživljajo kot brezvredne, ogabne človeške kreature, ki so nemočno ujete v odvisnost od hrane.
Meta Kramar
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