Results 31 to 40 of about 55,876 (211)
Radiation hardened 12T SRAM cell with improved writing capability for space applications
Memories - Materials, Devices, Circuits and Systems, 2023 This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment.
Rishabh Sharma +2 more
doaj +1 more source
Nanowire Volatile RAM as an Alternative to SRAM
, 2014 Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control
Khasanvis, Santosh +2 more
core +1 more source
Towards hardware acceleration of neuroevolution for multimedia processing applications on mobile devices [PDF]
, 2006 This paper addresses the problem of accelerating large artificial neural networks (ANN), whose topology and weights can evolve via the use of a genetic algorithm.
A.R. Omondi +10 more
core +1 more source
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj +1 more source
Design of half-select free 12T SRAM cell with high performance for health care applications
e-Prime: Advances in Electrical Engineering, Electronics and EnergyStatic Random Access Memory (SRAM) plays a crucial role in applications related to health like Body Area Networks (BANs) which require increased battery lives for the sensor nodes in BANs.
Manoj Kumar R․ +1 more
doaj +1 more source
HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems [PDF]
, 1968 Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed.
Adegbija, Tosiron, Kuan, Kyle
core +4 more sources
Suočavanje s krivnjom i sramom
Diacovensia, 2017 Prepoznavati osjećaje koji otežavaju uspostavljanje odnosa s drugima važno je za psihičko i duhovno blagostanje osobe jer kada se upoznamo s njima i postajemo svjesni kako utječu na život, moguće ih je mijenjati radi punijega odnosa s drugima.
Josip Bošnjaković
doaj +1 more source
Yuanzineng kexue jishu, 2022 Single event upset (SEU) has always been an important factor affecting the reliability of spacecraft electronic equipment, which can cause anomalies in electronic equipment in orbit, and can result in serious spacecraft failure. In order to master signal
ZHAO Zhendong;TAO Wenze;LI Yancun;CHENG Yi;ZHANG Qingxiang;AN Heng;QUAN Xiaoping;ZHANG Chenguang
doaj
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]
, 2014 In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A. +4 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source