Results 51 to 60 of about 2,552 (174)

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

open access: yesInfoMat, EarlyView.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda   +7 more
wiley   +1 more source

Low-power adiabatic 9T static random access memory

open access: yesThe Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi   +3 more
doaj   +1 more source

Intrinsic chiroptical responsivity in self‐powered organic photodiodes for polarization‐tunable optical convolution

open access: yesInfoMat, EarlyView.
Self‐powered chiral organic photodiodes function as polarization‐sensitive convolutional filters for circularly polarized light‐driven optical convolutional neural networks. This conceptually innovative architecture enables dynamic weight modulation, bias‐free operation, and exceptional noise resilience, boosting feature extraction fidelity from 0.15 ...
Lixuan Liu   +9 more
wiley   +1 more source

A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

open access: yesNanoscale Research Letters, 2017
This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu   +4 more
doaj   +1 more source

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

open access: yesIEEE Journal of the Electron Devices Society, 2020
The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) <; 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell ...
Yuri Hong, Yejoo Choi, Changhwan Shin
doaj   +1 more source

A Method for Assessing the Risks to Sustainability Posed by Process Operations

open access: yesSustainable Development, EarlyView.
ABSTRACT We present a framework for assessing the risks to sustainability posed by any given set of processes. The objective is to improve sustainability by enabling better decision‐making in policy and business contexts. The framework can be applied to any system of processes where available information supports discovery and quantification of ...
Richard C. Darton, Colin J. Axon
wiley   +1 more source

Ruminacije o pijenju alkohola kao prediktor depresivnosti i alkoholne žudnje kod osoba na bolničkom liječenju od ovisnosti o alkoholu

open access: yesPsychological Topics, 2019
Cilj je ovog istraživanja bio ispitati odnose između osjećaja srama zbog pijenja, ruminacija o pijenju, depresivnosti i alkoholne žudnje kod osoba s poremećajem upotrebe alkohola.
Nikola Babić
doaj  

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

open access: yesSmall, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong   +9 more
wiley   +1 more source

Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]

open access: yesIranian Journal of Electrical and Electronic Engineering, 2023
In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
doaj  

Jumping on the moon as a potential exercise countermeasure

open access: yesExperimental Physiology, EarlyView.
Abstract The Moon's gravitational field strength (17% Earth's gravity) may facilitate the use of bodyweight jumping as an exercise countermeasure against musculoskeletal and cardiovascular deconditioning in reduced gravity settings. The present study characterised the acute physiological and kinetic responses to bodyweight jumping in simulated Lunar ...
Patrick Swain   +4 more
wiley   +1 more source

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