Results 61 to 70 of about 55,126 (212)

Embedded intelligent SRAM [PDF]

Proceedings of the 40th conference on Design automation - DAC '03, 2003
Many embedded systems use a simple pipelined RISC processor for computation and an on-chip SRAM for data storage. We present an enhancement called Intelligent SRAM (ISRAM) that consists of a small computation unit with an accumulator that is placed near the on-chip SRAM. The computation unit can perform operations on two words from the same SRAM row or
Prabhat Jain, G. Edward Suh, Srinivas Devadas   +2 more
openaire   +1 more source

Hydra: An Accelerator for Real-Time Edge-Aware Permeability Filtering in 65nm CMOS

, 2017
Many modern video processing pipelines rely on edge-aware (EA) filtering methods. However, recent high-quality methods are challenging to run in real-time on embedded hardware due to their computational load. To this end, we propose an area-efficient and
Benini, Luca, Cavigelli, Lukas, Eggimann, Manuel, Gloor, Christelle, Schaffner, Michael, Scheidegger, Florian, Smolic, Aljosa   +6 more
core   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Monolayer Transistor SRAMs [PDF]

ACM Journal on Emerging Technologies in Computing Systems, 2017
Monolayer heterojunction FETs based on vertical heterogeneous transition metal dichalcogenides (TMDCFETs) and planar black phosphorus FETs (BPFETs) have demonstrated excellent subthreshold swing, high I ON I OFF , and high ...
Joydeep Rakshit, Kartik Mohanram, Runlai Wan, Kai Tak Lam, Jing Guo   +4 more
openaire   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

An Embedded Level-Shifting Dual-Rail SRAM for High-Speed and Low-Power Cache

IEEE Access, 2020
An embedded level-shifting (ELS) dual-rail SRAM is proposed to enhance the availability of dual-rail SRAMs. Although dual-rail SRAM is a powerful solution for satisfying the increasing demand for low-power applications, the enormous performance ...
Tae Hyun Kim, Hanwool Jeong, Juhyun Park, Hoonki Kim, Taejoong Song, Seong-Ook Jung   +5 more
doaj   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

IEEE Journal of the Electron Devices Society, 2020
The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) <; 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell ...
Yuri Hong, Yejoo Choi, Changhwan Shin
doaj   +1 more source

A Method for Assessing the Risks to Sustainability Posed by Process Operations

Sustainable Development, EarlyView.
ABSTRACT We present a framework for assessing the risks to sustainability posed by any given set of processes. The objective is to improve sustainability by enabling better decision‐making in policy and business contexts. The framework can be applied to any system of processes where available information supports discovery and quantification of ...
Richard C. Darton, Colin J. Axon
wiley   +1 more source

A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

Nanoscale Research Letters, 2017
This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu, Chu-Feng Liao, Yi-Hong Shih, Chrong Jung Lin, Ya-Chin King   +4 more
doaj   +1 more source