Results 81 to 90 of about 13,836 (232)

Analysis and Test of the Effects of Single Event Upsets Affecting the Configuration Memory of SRAM-based FPGAs

open access: yes, 2013
SRAM-based FPGAs are increasingly relevant in a growing number of safety-critical application fields, ranging from automotive to aerospace. These application fields are characterized by a harsh radiation environment that can cause the occurrence of ...
CASSANO, LUCA MARIA
core  

Low Power CNFET SRAM Design

open access: yes, 2014
CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices.
Pejman Hosseiniun   +3 more
core   +1 more source

SRAM with single bit line and low standby power consumption

open access: yes, 2011
指導教授:蕭明椿博士[[abstract]]在修平研究所這兩年說短不短說長不長,指導教授蕭明椿老師不只教導我在學術上的研究,平時就對待任何事情,也時常提醒我態度的謹慎,將所做事情完善的處理好。除了蕭老師之外也受到很多老師的關懷,不管在研究所的課程還是未來出社會找工作都一直有提出一些看法與我們探討,所長更是為了我們的研究環境想盡辦法,使我們能夠專心學習。[[abstract]]This thesis presents two kinds of novel single/dual SRAM with ...
廖笙緯
core  

A 100MHz to 1GHz, 0.35V to 1.5V supply 256 x 64 SRAM mock using symmetrized 9T SRAM cell with controlled read

open access: yes, 2008
In this paper, we present Dynamic Voltage and Frequency Managed 256 x 64 SRAM block in 65nm technology, for frequency ranging from 100MHz to 1GHz.
Verkila, Satish Anand   +2 more
core  

Robust SRAM Designs and Analysis

open access: yes, 2013
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs.
Mohanty, Saraju P   +2 more
core   +1 more source

A 100MHz to 1GHz, 0.35V to 1.5V Supply 256 x 64 SRAM Block Using Symmetrized 9T SRAM Cell with Controlled Read

open access: yes, 2008
In this paper, we present dynamic voltage and frequency Managed 256 x 64 SRAM block in 65 nm technology, for frequency ranging from 100 MHz to 1 GHz.
Verkila, Satish Anand   +2 more
core  

Design and Analysis of Three New SRAM Cells

open access: yesMajlesi Journal of Electrical Engineering
Three new SRAM cells are proposed in this paper. Increasing area overhead is the major concern in SRAM design. One of the new structures is included four transistors instead of six transistors as it is used in conventional 6T-SRAM cell for very high ...
Amir Ebrahimi   +2 more
doaj  

Psychopathy and Depression as Predictors of the Satanic Syndrome

open access: yesOpen Theology, 2017
The aims of this research were to determine: (1) the existence of an internally consistent and valid latent construct of the Satanic syndrome, and (2) if psychopathy and depression are significant predictors of the Satanic syndrome within different sex ...
Šram Zlatko
doaj   +1 more source

A new Dual-Vt 4T SRAM bitcell design

open access: yesDianzi Jishu Yingyong, 2018
Reducing the memory bit cell area by reducing the number of transistors is a relatively straightforward solution to achieving a high density SRAM design. In the design of critical SRAM cells, the stability characteristics exhibited by different operating
Zhang Luxuan, Qiao Shushan, Hao Xudan
doaj   +1 more source

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