Results 101 to 110 of about 13,883 (233)
Psychopathy and Depression as Predictors of the Satanic Syndrome
The aims of this research were to determine: (1) the existence of an internally consistent and valid latent construct of the Satanic syndrome, and (2) if psychopathy and depression are significant predictors of the Satanic syndrome within different sex ...
Šram Zlatko
doaj +1 more source
FPGA-based fault injection design for 16K-point FFT processor
There are a number of satellites working in the harsh space environment. The charged particles in space may strike the electron devices causing the undesired influences, such as soft errors in memory devices or permanent damage in hardware circuits ...
Chuang-An Mao +4 more
doaj +1 more source
Asymmetric SRAM cell for reducing bit-lines pre-charge power in write mode [PDF]
在一個超大型積體電路晶片中,靜態隨機存取記憶體電路往往佔有相當大的面積比例。在下一個世代,可預期移動式裝罝與高效能處理器需求的增加,記憶體電路所佔有的面積也隨之增加。近年來在系統晶片中,低功率的靜態隨機存取記憶體設計講求更高的效能,以及更低的消耗功率。在快取記憶體全部的功率消耗中,以單次寫入所需要的功率最為可觀。由於在記憶體裝置中,位元線、字元線與資料線具有龐大的寄生電容。大部份的低功率靜態隨機存取記憶體設計主要的改良集中在減少線路上的寄生電容與電壓切換的準位 ...
施建豐, Shi, Jian-Feng
core
Design and Analysis of Three New SRAM Cells
Three new SRAM cells are proposed in this paper. Increasing area overhead is the major concern in SRAM design. One of the new structures is included four transistors instead of six transistors as it is used in conventional 6T-SRAM cell for very high ...
Amir Ebrahimi +2 more
doaj
Ageing Mitigation Techniques for SRAM Memories [PDF]
As CMOS technology scales down, ageing-induced negative-bias temperature instability (NBTI) becomes more pronounced. The impact of NBTI on memory elements of digital circuits is crucial, in particular, in static random-access memory (SRAM) as it is ...
Zwolinski, Mark +5 more
core +1 more source
DoctorThis dissertation presents three case studies on the design of smart SRAM that is capable of in-memory data processing in addition to the conventional SRAM read and write operations.
구종은
core
Overcoming the Thermal‐Budget Barrier: Single‐Crystalline Silicon for Monolithic 3D Integration
Rare Metals, Volume 45, Issue 8, August 2026.
Dan Li, Yanbin Zhao, Paul K. Chu
wiley +1 more source
Low power design for SRAM [PDF]
As the development of microelectronics technology, the design of memory cell has already become an important embranchment in today’s semiconductor design.
Chen, Jiahuan
core
Ultra-low voltage SRAM design [PDF]
Static Random Access Memory or SRAM, is the most common embedded memory option for Integrated Circuits. With the scaling of supply voltage to close to sub threshold regions, it must still remain operable such that they can still work in ultra-low power
Zhou, Jay Yun Jie
core
In this work, the charge plasma (CP) technique is employed to induce carriers in the undoped channel region of a Silicon-on-Insulator (SOI) trigate MOSFET, eliminating the need for conventional doping and reducing variability at nanoscale dimensions.
S.A. Kumar +3 more
doaj +1 more source

