Results 101 to 110 of about 17,373 (224)
Журнал нано- та електронної фізикиIn this work, the charge plasma (CP) technique is employed to induce carriers in the undoped channel region of a Silicon-on-Insulator (SOI) trigate MOSFET, eliminating the need for conventional doping and reducing variability at nanoscale dimensions.
S.A. Kumar +3 more
doaj +1 more source
Sensitive Volume Modeling in Calculation of Space Radiation-Induced SEU Cross Section [PDF]
فصلنامه علوم و فناوری فضایی, 2014 Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume.
S. Boorboor, S. A. H. Feghhi, H. Jafari
doaj
Reducing Leakage of SRAM Using Dual-Gate-Oxide-Thickness Transistors in 45nm Bulk Technology
, 2007 提出了一种在45nm体硅工艺下使用双-栅氧化层厚度来降低整体泄漏功耗的方法.所提方法具有不增加面积和延时、改善静态噪声边界、对SRAM设计流程的改动很小等优点.提出了三种新型的SRAM单元结构,并且使用这些单元设计了一个32kb的SRAM,仿真结果表明,整体泄漏功耗可以降低50 ...
杨志家, 杨松, 王宏
core
A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node
, 2008 This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have
Zhang Wancheng, Wu Nanjian
core
Low-power, high-speed sram design: A review
, 2007 This article describes the challenges in the design of low-power SRAM and difficulties in designing a high-speed static RAM, Following an overview of general issues, approaches/techniques in achieving low-power SRAM, as well as techniques to increase ...
Tan, Soon-Hwei +3 more
core +1 more source
SRAM-PG: Power Delivery Network Benchmarks from SRAM Circuits
2024 25th International Symposium on Quality Electronic Design (ISQED)Designing the power delivery network (PDN) in very large-scale integrated (VLSI) circuits is increasingly important, especially for nowadays low-power integrated circuit (IC) design. In order to ensure that the designed PDN enables a low level of voltage drop and noise which is required for the success of IC design, accurate analysis of PDN is largely ...
Shan Shen, Zhiqiang Liu, Wenjian Yu
openaire +4 more sources
Vth-shiftable SRAM cell TEGs for direct measurement for the immunity of the threshold voltage variability [PDF]
We developed VTSTs for 6T-SRAM and RL-SRAM and evaluated them to investigate the influences of SRAM operation by Vth fluctuation using measured FCMs and CΔVths.
55624478963 +16 more
core +1 more source
Crkva u Svijetu, 2016 Pri razmatranju problematike srama u članku su izdvojeni poj¬movi sram i stid (shame). Polazeći od jezične uporabe pojma, ovaj rad želi pokazati što se shvaća pod imenicom sram, odnosno stid, te kako je to bitno vezano uz naše tjelo, kao i uz zajednicu ...
Gordan Črpić, Krunoslav Novak
doaj
Eksplorativna i konfirmatorna faktorska analiza skale nacionalističkog sindroma (sns-1)
Političke Perspektive, 2014 U ovom smo istraživanju nastojali utvrditi nalaze li se nacionalna afektivna vezanost, ksenofobija, antisemitizam, percepcija nacionalnomanjinske prijetnje i mentalitet nacionalnoga opsadnog stanja u takvim međusobnim relacijama da na latentnoj razini ...
Zlatko Šram
doaj
A study on the effects of variability on performance of CNFET based digital circuits
, 2012 With the continuous trend of reducing feature sizes, and employing continuously smaller components on integrated circuits, new challenges arise on the way of silicon CMOS circuits and devices.
Shahidipour, Hamed
core +1 more source