Results 111 to 120 of about 13,883 (233)
Nanoscale SRAM Variability and Optimization [PDF]
, 2011 Robust SRAM design is one of the key challenges of process technology scaling. The steady pace of process technology scaling allows doubling memory array sizes, which requires thorough characterization of the impact of sources of process variability on ...
Toh, Seng Oon
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Sensitive Volume Modeling in Calculation of Space Radiation-Induced SEU Cross Section [PDF]
فصلنامه علوم و فناوری فضایی, 2014 Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume.
S. Boorboor, S. A. H. Feghhi, H. Jafari
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Crkva u Svijetu, 2016 Pri razmatranju problematike srama u članku su izdvojeni poj¬movi sram i stid (shame). Polazeći od jezične uporabe pojma, ovaj rad želi pokazati što se shvaća pod imenicom sram, odnosno stid, te kako je to bitno vezano uz naše tjelo, kao i uz zajednicu ...
Gordan Črpić, Krunoslav Novak
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Reducing Leakage of SRAM Using Dual-Gate-Oxide-Thickness Transistors in 45nm Bulk Technology [PDF]
, 2007 提出了一种在45nm体硅工艺下使用双-栅氧化层厚度来降低整体泄漏功耗的方法.所提方法具有不增加面积和延时、改善静态噪声边界、对SRAM设计流程的改动很小等优点.提出了三种新型的SRAM单元结构,并且使用这些单元设计了一个32kb的SRAM,仿真结果表明,整体泄漏功耗可以降低50 ...
杨志家, 杨松, 王宏
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SRAM Core-cell Quality Metrics [PDF]
, 2009 National audienceIn the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM).
Girard, Patrick +6 more
core +2 more sources
SRAM-PG: Power Delivery Network Benchmarks from SRAM Circuits
2024 25th International Symposium on Quality Electronic Design (ISQED)Designing the power delivery network (PDN) in very large-scale integrated (VLSI) circuits is increasingly important, especially for nowadays low-power integrated circuit (IC) design. In order to ensure that the designed PDN enables a low level of voltage drop and noise which is required for the success of IC design, accurate analysis of PDN is largely ...
Shan Shen, Zhiqiang Liu, Wenjian Yu
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SNM Analysis & SRAM Based Memory Design [PDF]
, 2017 In digital systems memory arrays are forming an integral building block. There are various aspects that need to be known to begin with the design of SRAM based memory and are vital for design of many other digital circuits. The integrated circuit that is
Ms, Akshdeepika
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雙埠SRAM晶胞 DUAL PORT SRAM CELL [PDF]
, 2008 [[abstract]]本創作提出一種雙埠SRAM晶胞，其於讀取雙埠SRAM晶胞所儲存之資料後，無須對所讀取之資料再執行反相邏輯操作，該雙埠SRAM晶胞係包括一第一反相器(由第一PMOS電晶體P1與第一NMOS電晶體M1所組成)、一第二反相器(由第二PMOS電晶體P2與第二NMOS電晶體M1所組成)、一寫入用選擇電晶體(MWS)、一讀取用選擇電晶體(MRS)、一反相電晶體(MINV)、一寫入用字元線(WWL)、一讀取用字元線(RWL)、一寫入用位元線(WBL)以及一讀取用位元線(RBL)，其中 ...
蕭明椿
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A Study on Conventional SRAM and Adiabatic SRAM
Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based integrated circuit. It is made in many different types and technologies. Most modern semiconductor memory devices are implemented allowing random access, which means that it takes the same amount of time to access any memory ...
Dhanasekar, J. +2 more
openaire +1 more source
Eksplorativna i konfirmatorna faktorska analiza skale nacionalističkog sindroma (sns-1)
Političke Perspektive, 2014 U ovom smo istraživanju nastojali utvrditi nalaze li se nacionalna afektivna vezanost, ksenofobija, antisemitizam, percepcija nacionalnomanjinske prijetnje i mentalitet nacionalnoga opsadnog stanja u takvim međusobnim relacijama da na latentnoj razini ...
Zlatko Šram
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