Results 111 to 120 of about 13,836 (232)
Asymmetric SRAM cell for reducing bit-lines pre-charge power in write mode
在一個超大型積體電路晶片中,靜態隨機存取記憶體電路往往佔有相當大的面積比例。在下一個世代,可預期移動式裝罝與高效能處理器需求的增加,記憶體電路所佔有的面積也隨之增加。近年來在系統晶片中,低功率的靜態隨機存取記憶體設計講求更高的效能,以及更低的消耗功率。在快取記憶體全部的功率消耗中,以單次寫入所需要的功率最為可觀。由於在記憶體裝置中,位元線、字元線與資料線具有龐大的寄生電容。大部份的低功率靜態隨機存取記憶體設計主要的改良集中在減少線路上的寄生電容與電壓切換的準位 ...
施建豐, Shi, Jian-Feng
core
Ageing Mitigation Techniques for SRAM Memories
As CMOS technology scales down, ageing-induced negative-bias temperature instability (NBTI) becomes more pronounced. The impact of NBTI on memory elements of digital circuits is crucial, in particular, in static random-access memory (SRAM) as it is ...
Zwolinski, Mark +5 more
core +1 more source
Learning is crucial for the brain’s ability to adapt to changing conditions. We suggest a collection of novel neuromorphic construction circuits, adjustable synapse circuits, and CMOS Spike Based Driven Synaptic Plasticity (CSBDSP) erudition algorithm ...
Joshika Sharma +2 more
doaj +1 more source
DoctorThis dissertation presents three case studies on the design of smart SRAM that is capable of in-memory data processing in addition to the conventional SRAM read and write operations.
구종은
core
As the development of microelectronics technology, the design of memory cell has already become an important embranchment in today’s semiconductor design.
Chen, Jiahuan
core
Static Random Access Memory or SRAM, is the most common embedded memory option for Integrated Circuits. With the scaling of supply voltage to close to sub threshold regions, it must still remain operable such that they can still work in ultra-low power
Zhou, Jay Yun Jie
core
Parametric Reliability of Low Power Adiabatic SRAM [PDF]
This paper presents our attempt to recover back energy that is stored in the bit lines and in the cell and reused it by a phenomenal technique of energy recovery known as adiabatic principles.
Kumar, R. (Rakesh), Kumar, A. (Abhishek)
core
Eksplorativna i konfirmatorna faktorska analiza skale nacionalističkog sindroma (sns-1)
U ovom smo istraživanju nastojali utvrditi nalaze li se nacionalna afektivna vezanost, ksenofobija, antisemitizam, percepcija nacionalnomanjinske prijetnje i mentalitet nacionalnoga opsadnog stanja u takvim međusobnim relacijama da na latentnoj razini ...
Zlatko Šram
doaj
Reducing Leakage of SRAM Using Dual-Gate-Oxide-Thickness Transistors in 45nm Bulk Technology
提出了一种在45nm体硅工艺下使用双-栅氧化层厚度来降低整体泄漏功耗的方法.所提方法具有不增加面积和延时、改善静态噪声边界、对SRAM设计流程的改动很小等优点.提出了三种新型的SRAM单元结构,并且使用这些单元设计了一个32kb的SRAM,仿真结果表明,整体泄漏功耗可以降低50 ...
杨志家, 杨松, 王宏
core
SRAM Core-cell Quality Metrics
National audienceIn the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM).
Girard, Patrick +6 more
core +1 more source

