Results 11 to 20 of about 22,014 (257)
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
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Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory
Sensors, 2023 This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee +2 more
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IEEE Access, 2022 In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian +9 more
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Electronics Letters, 2022 In‐memory computing (IMC) is a novel computing architecture that presents considerable potential in solving the data transmission and energy consumption problems faced by the von Neumann architecture.
Zhiting Lin +5 more
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An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Applied Sciences, 2022 Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
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Performance Analysis Of SRAM and Dram in Low Power Application [PDF]
E3S Web of Conferences, 2023 All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S. +5 more
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Si/SiGe Tunneling Static Random Access Memories [PDF]
ECS Transactions, 2012 One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum supply voltage that MOSFET technology is capable of delivering.
Gary Ternent, Douglas J. Paul
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Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
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Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
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A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process
Nanoscale Research Letters, 2017 This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu +4 more
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