Low-Power Radiation-Hardened Static Random Access Memory with Enhanced Read Stability for Space Applications [PDF]
Applied SciencesIn space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
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Firmware Attestation in IoT Swarms Using Relational Graph Neural Networks and Static Random Access Memory [PDF]
AIThe proliferation of Internet of Things (IoT) swarms—comprising billions of low-end interconnected embedded devices—has transformed industrial automation, smart homes, and agriculture.
Abdelkabir Rouagubi +2 more
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Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device [PDF]
Active and Passive Electronic Components, 2013 We proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell.
Kazuya Nakayama, Akio Kitagawa
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X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories [PDF]
, 2018 Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying ...
Amogh Agrawal +3 more
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A 256 bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors [PDF]
Japanese Journal of Applied Physics, 1976 A p-channel 256 bit nonvolatile static RAM which is essentially free from any limitation to the memory cycles is developed by means of a new concept of a nonvolatile flip-flop. The logical organization is 64 word × 4 bit. The memory can be operated as a static memory with access time of 400 ns and cycle time of 1 µs under a stable power supply, and as ...
S. Saito +5 more
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Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory [PDF]
IEEE Access, 2023 In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD ...
Jonghyeon Ha +5 more
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Learning optimal erasure of a Static Random Access Memory [PDF]
In this paper, we study the thermodynamic cost associated with erasing a static random access memory. By combining the stochastic thermodynamics framework of electronic circuits with machine learning-based optimization techniques, we show that it is possible to erase an electronic random access memory at arbitrarily fast speed and finite heat ...
Tomas Basile, Karel Proesmans
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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Security and Privacy of Blockchain-Based Single-Bit Cache Memory Architecture for IoT Systems
IEEE Access, 2022 This paper provides an overview of blockchain technology’s security and privacy features, as well as an overview of IoT-based cache memory and single-bit six transistor static random-access memory cell sense amplifier architecture.
Reeya Agrawal +3 more
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Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
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