Results 11 to 20 of about 31,922 (257)

Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory

open access: yesSensors, 2023
This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee   +2 more
doaj   +1 more source

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

open access: yesIEEE Access, 2022
In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian   +9 more
doaj   +1 more source

Low-power adiabatic 9T static random access memory

open access: yesThe Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi   +3 more
doaj   +1 more source

Static random‐access memory with embedded arithmetic logic units for in‐memory computing and ternary content addressable memory operation

open access: yesElectronics Letters, 2022
In‐memory computing (IMC) is a novel computing architecture that presents considerable potential in solving the data transmission and energy consumption problems faced by the von Neumann architecture.
Zhiting Lin   +5 more
doaj   +1 more source

An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time

open access: yesApplied Sciences, 2022
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin   +4 more
doaj   +1 more source

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis   +11 more
doaj   +1 more source

Performance Analysis Of SRAM and Dram in Low Power Application [PDF]

open access: yesE3S Web of Conferences, 2023
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S.   +5 more
doaj   +1 more source

A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

open access: yesNanoscale Research Letters, 2017
This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu   +4 more
doaj   +1 more source

Impact of different parameters on the static random access memory under the total ionizing dose

open access: yesFushe yanjiu yu fushe gongyi xuebao, 2023
The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang   +9 more
doaj   +1 more source

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

open access: yesActive and Passive Electronic Components, 2023
Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
doaj   +1 more source

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