Results 21 to 30 of about 295,937 (324)
Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory
Sensors, 2023 This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee +2 more
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Performance Analysis Of SRAM and Dram in Low Power Application [PDF]
E3S Web of Conferences, 2023 All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S. +5 more
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IEEE Access, 2022 In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian +9 more
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Review on Performance of Static Random Access Memory (SRAM)
IJARCCE, 2015 V Santhiya., N Mathan
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An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Applied Sciences, 2022 Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
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Si/SiGe Tunneling Static Random Access Memories [PDF]
ECS Transactions, 2012 One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum supply voltage that MOSFET technology is capable of delivering.
Gary Ternent, Douglas J. Paul
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Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
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March AB, March AB1: new March tests for unlinked dynamic memory faults [PDF]
, 2005 Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to
Benso, Alfredo +4 more
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Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
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A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process
Nanoscale Research Letters, 2017 This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu +4 more
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