Results 21 to 30 of about 22,014 (257)
Active and Passive Electronic Components, 2023 Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
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Ultra-low leakage static random access memory design
International Journal of Reconfigurable and Embedded Systems (IJRES), 2023 An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is proposed in this paper. Compared to the 6T SRAM and other existing 8T SRAM cells, leakage power of the proposed cell in hold mode reduced significantly. The stability parameters of the proposed cell are calculated using butterfly method and also N-curve method.
Didigam Anitha, Mohd. Masood Ahmad
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Sensors, 2023 This paper introduces an n-type pseudo-static gain cell (PS-nGC) embedded within dynamic random-access memory (eDRAM) for high-speed processing-in-memory (PIM) applications.
Subin Kim, Ingu Jeong, Jun-Eun Park
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Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs
AIP Advances, 2022 Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li +8 more
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Combination-Encoding Content-Addressable Memory With High Content Density
IEEE Access, 2019 Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has
Guhyun Kim +5 more
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Review of Physically Unclonable Functions (PUFs): Structures, Models, and Algorithms
Frontiers in Sensors, 2022 Physically unclonable functions (PUFs) are now an essential component for strengthening the security of Internet of Things (IoT) edge devices. These devices are an important component in many infrastructure systems such as telehealth, commerce, industry,
Fayez Gebali, Mohammad Mamun
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Leakage Controlled Read Stable Static Random Access Memories
Journal of Computers, 2008 Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a critical component in modern CMOS integrated circuits, novel approaches to addressing these problems are needed.
Sayeed A. Badrudduza +3 more
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Radiation Hardened Read-Stability and Speed Enhanced SRAM for Space Applications
Applied SciencesWith the advancement of CMOS technology, the susceptibility of SRAM to single node upset (SNU), double node upset (DNU), and multiple node upset (MNU) induced by radiation has increased.
Woo Chang Choi, Sung-Hun Jo
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Pediatric Blood &Cancer, EarlyView.ABSTRACT Purpose Cognitive and psychological difficulties could negatively interfere with treatment adherence and quality of life before and after hematopoietic stem cell transplant (HSCT). Methods to mitigate these changes may have positive effects on treatment success.
Kristen L. Votruba +11 more
wiley +1 more source
Low-Power 8T SRAM Compute-in-Memory Macro for Edge AI Processors
Applied SciencesThe traditional Von Neumann architecture creates bottlenecks due to data movement. The compute-in-memory (CIM) architecture performs computations within memory bit-cell arrays, enhancing computational performance.
Hye-Ju Shin, Sung-Hun Jo
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