Results 31 to 40 of about 295,937 (324)

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

open access: yesActive and Passive Electronic Components, 2023
Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
doaj   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

open access: yes, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano   +3 more
core   +1 more source

A Unique March Test Algorithm for the Wide Spread of Realistic Memory Faults in SRAMs [PDF]

open access: yes, 2006
Among the different types of algorithms proposed to test static random access memories (SRAMs), march tests have proven to be faster, simpler and regularly structured.
Benso, Alfredo   +4 more
core   +1 more source

An N-Type Pseudo-Static eDRAM Macro with Reduced Access Time for High-Speed Processing-in-Memory in Intelligent Sensor Hub Applications

open access: yesSensors, 2023
This paper introduces an n-type pseudo-static gain cell (PS-nGC) embedded within dynamic random-access memory (eDRAM) for high-speed processing-in-memory (PIM) applications.
Subin Kim, Ingu Jeong, Jun-Eun Park
doaj   +1 more source

March Test Generation Revealed [PDF]

open access: yes, 2008
Memory testing commonly faces two issues: the characterization of detailed and realistic fault models and the definition of time-efficient test algorithms.
Benso, Alfredo   +4 more
core   +2 more sources

Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs

open access: yesAIP Advances, 2022
Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li   +8 more
doaj   +1 more source

March AB, a State-of-the-Art March Test for Realistic Static Linked Faults and Dynamic Faults in SRAMs [PDF]

open access: yes, 2007
Memory testing commonly faces two issues: the characterisation of detailed and realistic fault models, and the definition of time-efficient test algorithms able to detect them.
Bosio, Alberto   +3 more
core   +1 more source

Efficient Gauss Elimination for Near-Quadratic Matrices with One Short Random Block per Row, with Applications [PDF]

open access: yes, 2019
In this paper we identify a new class of sparse near-quadratic random Boolean matrices that have full row rank over F_2 = {0,1} with high probability and can be transformed into echelon form in almost linear time by a simple version of Gauss elimination.
Dietzfelbinger, Martin, Walzer, Stefan
core   +3 more sources

Combination-Encoding Content-Addressable Memory With High Content Density

open access: yesIEEE Access, 2019
Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has
Guhyun Kim   +5 more
doaj   +1 more source

SU(2) Lattice Gauge Theory Simulations on Fermi GPUs [PDF]

open access: yes, 2011
In this work we explore the performance of CUDA in quenched lattice SU(2) simulations. CUDA, NVIDIA Compute Unified Device Architecture, is a hardware and software architecture developed by NVIDIA for computing on the GPU.
Bhanot   +14 more
core   +1 more source

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