Results 71 to 80 of about 22,014 (257)

URcon: Unified and Reconfigurable Control and Verification Platform for Multi-Mode Customized eDRAM and SRAM Macros

IEEE Access
With the rapid development of various technologies, processing large amounts of data has become essential. To address this trend, various high-density and high-performance memories have emerged.
Ho-Sung Lee, Ik-Hyeon Jeon, Jiwon Lee, Hyeonjun Cheon, Joo-Hyung Chae   +4 more
doaj   +1 more source

Programmable DNA‐Peptide Hybrid Nanostructures for Potent Neutralization of Multiple Influenza a Virus Subtypes

Advanced Functional Materials, EarlyView.
A multivalent antiviral platform based on honeycomb‐shaped DNA nanostructures (HC–Urumin) is developed to enhance the potency and breadth of the host defense peptide Urumin. Through spatially patterned trimeric presentation, HC–Urumin disrupts influenza A virus entry, improves cell viability, and reduces disease severity in vivo‐offering a modular and ...
Saurabh Umrao, Abhisek Dwivedy, Payton L. Haak, Dhanush Gandavadi, Laurie A. Rund, Chi Chen, Vineetha Mareddy, Lifeng Zhou, Jinwei Duan, Ying Fang, Andrew J. Steelman, Xing Wang   +11 more
wiley   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

Emergent Spin‐Glass Behavior in an Iron(II)‐Based Metal–Organic Framework Glass

Advanced Functional Materials, EarlyView.
A one‐pot, solvent‐free synthesis yields an Fe2+‐based metal‐organic framework (MOF) glass featuring a continuous random network structure. The material exhibits spin‐glass freezing at 14 K, driven by topological‐disorder and short‐range magnetic frustration, showcasing the potential of MOF glasses as a plattform for cooperative magnetic phenomena in ...
Chinmoy Das, Soma Salamon, Joachim Landers, Jan‐Benedikt Weiß, Wen‐Long Xue, Pascal Kolodzeiski, Roman Pallach, Heiko Wende, Sebastian Henke   +8 more
wiley   +1 more source

S²RAM: Optimization of SRAM With Memory Access Patterns

IEEE Access
This paper presents a static sequential-random-access memory (S2RAM) designed to enable low-power and high-performance operations for workloads involving sequential memory accesses.
Woong Choi
doaj   +1 more source

Bimetallic Nanoreactor Activates cGAS‐STING Pathway via mtDNA Release for Cancer Metalloimmunotherapy

Advanced Functional Materials, EarlyView.
A bimetallic Mn–Ca nanoreactor (MCC) is developed as a non‐nucleotide STING nanoagonist for cancer metalloimmunotherapy. MCC induces Ca2+ overload and hydroxyl radical generation, resulting in mitochondrial damage and mtDNA release. The released mtDNA cooperates with Mn2+ to robustly activate cGAS–STING signaling.
Xin Wang Mo, Nguyen Thi Nguyen, LiLi Guo, Ngoc Man Phan, Hyunsu Shin, Tae‐il Kim, Yu Seok Youn, Jaeyun Kim   +7 more
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

Active and Passive Electronic Components, 2013
We proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell.
Kazuya Nakayama, Akio Kitagawa
doaj   +1 more source

VARIABILITY ANALYSIS OF 6T AND 7T SRAM CELL IN SUB-45NM TECHNOLOGY

International Islamic University Malaysia Engineering Journal, 2011
This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness.
Aminul Islam, Mohd. Hasan
doaj   +1 more source