Results 71 to 80 of about 17,344,745 (166)

Influence of Space Weather on Single Event Effects in Aviation When Employing Modern Commercial Sub‐100 nm Electronic Devices

Space Weather, Volume 24, Issue 11, November 2026.
Abstract During November 2025 thousands of commercial aircraft (Airbus A320s) had to be grounded due to the risk of ionizing radiation effects on the avionics system. Safety‐critical systems continue to use modern commercial devices, and therefore an understanding of their responses within enhanced radiation environments is crucial to ensure reliable ...
M. Barker, K. Ryden, C. Dyer, F. Lei
wiley   +1 more source

Reliability of physical unclonable function derived from the power-up state of static random-access memory in extreme environments

, 2023
Static random-access memory (SRAM) is a high-speed, volatile memory that is ubiquitous in a wide range of computing platforms. Because of intrinsic process variations, an SRAM array’s power-up state presents a random yet distinctive, device-specific ...
Wilson, Horace J.l
core   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, Volume 38, Issue 59, 22 October 2026.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

A Unique March Test Algorithm for the Wide Spread of Realistic Memory Faults in SRAMs [PDF]

, 2006
Among the different types of algorithms proposed to test static random access memories (SRAMs), march tests have proven to be faster, simpler and regularly structured.
Di Natale, Giorgio, Bosio, Alberto, Benso, Alfredo, Prinetto, Paolo Ernesto, Di Carlo, Stefano, A. Benso, P. Prinetto, A. Bosio, G. Di Natale, S. Di Carlo   +9 more
core   +1 more source

VARIABILITY ANALYSIS OF 6T AND 7T SRAM CELL IN SUB-45NM TECHNOLOGY

International Islamic University Malaysia Engineering Journal, 2011
This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness.
Aminul Islam, Mohd. Hasan
doaj   +1 more source

Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]

Iranian Journal of Electrical and Electronic Engineering, 2023
In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
doaj  

Nanoelectromechanically Gated Gain Cell eDRAM

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention,
Collin P. Finnan, Choong-Ho Rhee, Tahir Ghani, Tsu-Jae King-Liu   +3 more
doaj   +1 more source

Memory Fault Simulator for Static-Linked Faults [PDF]

, 2006
Static linked faults are considered an interesting class of memory faults. Their capability of influencing the behavior of other faults causes the hiding of the fault effect and makes test algorithm design and validation a very complex task.
Di Natale, Giorgio, Bosio, Alberto, A. Benso, P. Prinetto, A. Bosio, Benso, Alfredo, S. Carlo, Prinetto, Paolo Ernesto, G. Natale, Di Carlo, Stefano   +9 more
core   +1 more source

Investigating the impact of irradiation on various ringFET-based SRAM circuits using 3D TCAD

Scientific Reports
Single-event upsets (SEUs) in Static Random Access Memory (SRAM) can corrupt stored instructions, data, or configuration bits, potentially leading to logic malfunction, system hang, or system reset. Therefore, the investigation of single-event effects is
R. Anandhi, K. K. Nagarajan, M. Ramya
doaj   +1 more source

Digital Simulation of Superconductive Memory System Based on Hardware Description Language Modeling

Advances in Condensed Matter Physics, 2018
We have modeled a memory system using Josephson Junction to attain low power consumption using low input voltage compared to conventional Complementary Metal Oxide Semiconductor-Static Random Access Memory (CMOS-SRAM).
S. Narendran, J. Selvakumar
doaj   +1 more source