Results 1 to 10 of about 3,263 (180)

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM [PDF]

Micromachines, 2022
Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
doaj   +2 more sources

Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]

Sensors
Asymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj   +2 more sources

Real-Time Switching Dynamics in STT-MRAM

IEEE Journal of the Electron Devices Society, 2022
In this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented.
N. Yazigy, J. Postel-Pellerin, V. Della Marca, K. Terziyan, R. C. Sousa, P. Canet, G. Di Pendina   +6 more
doaj   +4 more sources

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory [PDF]

Science and Technology of Advanced Materials
A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is ...
Deepak Kumar, Mio Ishibashi, Tufan Roy, Masahito Tsujikawa, Masafumi Shirai, Shigemi Mizukami   +5 more
doaj   +2 more sources

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]

Micromachines
As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye, Xiaofei Zhang, Nannan Lu, Jiawei Li, Jun Jia, Guilin Zhao, Jiejie Sun, Lei Zhang, Chao Wang   +8 more
doaj   +2 more sources

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales [PDF]

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +2 more sources

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Modeling and enhancing magnetic immunity of STT-MRAM

AIP Advances, 2023
In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in ...
Guangjun Zhang, Yanfeng Jiang
doaj   +1 more source

Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches

IEEE Access, 2022
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim, Yuze Chen, Yongho Lee, Limei Peng, Seokin Hong   +4 more
doaj   +1 more source

Neural network detector with sparse codes for spin transfer torque magnetic random access memory

Cogent Engineering, 2023
This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj   +1 more source