Results 91 to 100 of about 3,273 (179)

STT-DPSA: Digital PUF-Based Secure AuthenticationUsing STT-MRAM for the Internet of Things. [PDF]

Micromachines (Basel), 2020
Chien WC, Chang YC, Tsou YT, Kuo SY, Chang CR.   +4 more
europepmc   +1 more source

Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey

IEEE Access
In recent years, the rapid growth of big data and the increasing demand for high-performance computing have fueled the development of novel computing architectures.
Alaba Yusuf, Tosiron Adegbija, Dhruv Gajaria   +2 more
doaj   +1 more source

Enhanced write margin of perpendicular MRAM cells using thick MgO cap layer

AIP Advances
Implementation of spin transfer torque magneto-resistive random access memory (STT-MRAM) in memory chips requires that the write margin of the MRAM cell, defined as the difference between breakdown voltage and write voltage for the specified endurance ...
G. Mihajlović, T. S. Santos, J. Li, J. A. Katine, M. K. Grobis   +4 more
doaj   +1 more source

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

AIP Advances
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

Oxygen vacancy-driven spin-transfer torque across MgO magnetic tunnel junctions

npj Spintronics
Flowing an electrical current that is both of high areal density and large spin polarization across a magnetic tunnel junction (MTJ) can, through spin-transfer torque (STT), alter the relative magnetic orientation of the MTJ’s ferromagnetic electrodes ...
L. M. Kandpal, B. Taudul, E. Monteblanco, A. Kumar, K. Katcko, F. Schleicher, P. Gupta, S. Boukari, W. Weber, V. Da Costa, J. D. Costa, T. Bӧhnert, R. Ferreira, P. Freitas, M. Hehn, M. Alouani, P. K. Muduli, D. Lacour, M. Bowen   +18 more
doaj   +1 more source

Optimization of the 3D multi-level SOT-MRAMs

AIP Advances
With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed.
Hui Lin, Yanfeng Jiang
doaj   +1 more source

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. [PDF]

Micromachines (Basel), 2023
Hadámek T, Jørstad NP, de Orio RL, Goes W, Selberherr S, Sverdlov V.   +5 more
europepmc   +1 more source

Editorial for the Topic on Magnetic Materials and Devices. [PDF]

Micromachines (Basel)
Sverdlov V.
europepmc   +1 more source

Improving MRAM Performance with Sparse Modulation and Hamming Error Correction. [PDF]

Sensors (Basel)
Le N, Nguyen TA, Lee JH, Lee J.
europepmc   +1 more source