Results 131 to 140 of about 3,273 (179)

Observation of Thickness-Modulated Out-of-Plane Spin-Orbit Torque in Polycrystalline Few-Layer Td-WTe₂ Film. [PDF]

Nanomaterials (Basel)
Zheng M, Zhang W, Lv Y, Liu Y, Xiong R, Zhang Z, Lu Z.   +6 more
europepmc   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling. [PDF]

Sci Rep
Jørstad NP, Pruckner B, Goes W, Selberherr S, Sverdlov V.   +4 more
europepmc   +1 more source

Enhanced Field-Like Torque Generated from the Anisotropic Spin-Split Effect in Triple-Domain RuO₂ for Energy-Efficient Spin-Orbit Torque Magnetic Random-Access Memory. [PDF]

Adv Sci (Weinh)
Nguyen TVA, Naganuma H, Vu TNH, DuttaGupta S, Saito Y, Vu D, Endo Y, Ikeda S, Endoh T.   +8 more
europepmc   +1 more source

Low-Power Memristor for Neuromorphic Computing: From Materials to Applications. [PDF]

Nanomicro Lett
Xia Z, Sun X, Wang Z, Meng J, Jin B, Wang T.   +5 more
europepmc   +1 more source

Magnetization dynamics: From the Landau-Lifschitz equation to spintronics. [PDF]

Struct Dyn
Acremann Y.
europepmc   +1 more source

Experimental demonstration of magnetic tunnel junction-based computational random-access memory. [PDF]

Npj Unconv Comput
Lv Y, Zink BR, Bloom RP, Cılasun H, Khanal P, Resch S, Chowdhury Z, Habiboglu A, Wang W, Sapatnekar SS, Karpuzcu U, Wang JP.   +11 more
europepmc   +1 more source

A Survey of Emerging Memory in a Microcontroller Unit. [PDF]

Micromachines (Basel)
Qi L, Fan J, Cai H, Fang Z.
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

STT-MRAM Sensing: A Review

IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na, Seung H. Kang, Seong-Ook Jung
openaire   +1 more source

STT-MRAM for Automotive Applications

2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021
There is a growing need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions. Automotive applications place severe demands memory devices. In the case of data retention, Automotive Grade 0 requires survival of T ambient 150 °C for 20 years with no loss in data integrity.
K. Nagel, S. Aggarwal, G. Shimon, S. Ikegawa, F. Mancoff, J. Sun   +5 more
openaire   +1 more source