Results 21 to 30 of about 3,254 (161)
Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation [PDF]
, 2019 Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance.
Bagherzadeh, N +11 more
core +2 more sources
Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
doaj +1 more source
Performance impact of a slower main memory: a case study of STT-MRAM in HPC [PDF]
, 2016 In high-performance computing (HPC), significant effort is invested in research and development of novel memory technologies. One of them is Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) --- byte-addressable, high-endurance non-volatile ...
Asifuzzaman, Kazi +6 more
core +1 more source
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015 Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana +3 more
openaire +3 more sources
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
doaj +1 more source
Novel multi-bit parallel pipeline-circuit design for STT-MRAM
AIP Advances, 2023 In the paper, novel multi-bit parallel pipeline circuit design of STT-MRAM is proposed to improve the read and write efficiency. The shift register is utilized to change the series data into the parallel ones.
Guangjun Zhang, Yanfeng Jiang
doaj +1 more source
APL Materials, 2022 The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to Fert and Grunberg.
M. Pinarbasi, A. D. Kent
doaj +1 more source
Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions [PDF]
, 2015 The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed ...
Buda-Prejbeanu, L. D. +4 more
core +2 more sources
Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs
IEEE Access, 2020 Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon +4 more
doaj +1 more source
RRAM variability and its mitigation schemes [PDF]
, 2016 Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve +3 more
core +1 more source