Results 31 to 40 of about 3,254 (161)
APL Materials, 2022 Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida +7 more
doaj +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob +5 more
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Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching
, 2011 A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses.
Abraham, David W. +3 more
core +1 more source
Electrical TCAD Simulation of STT-MRAMs
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
openaire +2 more sources
Offset fields in perpendicularly magnetized tunnel junctions
, 2019 We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide.
Carpenter, R. +6 more
core +3 more sources
Yield, Area and Energy Optimization in Stt-MRAMs using failure aware ECC
, 2016 Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths.
Fong, Xuanyao +3 more
core +1 more source
Design of a full 1Mb STT-MRAM based on advanced FDSOI technology
MATEC Web of Conferences, 2017 In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
doaj +1 more source
, 2014 The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density maintaining the
Azzerboni, Bruno +3 more
core +1 more source
AIP Advances, 2020 In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun +7 more
doaj +1 more source
, 2019 Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however, thermal ...
Moore, Richard O. +2 more
core +1 more source