Results 41 to 50 of about 3,254 (161)

Design of Adiabatic MTJ-CMOS Hybrid Circuits

, 2017
Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life.
Badawy, Abdel-Hameed, Saifullah, Z. M., Sharifi, Fazel   +2 more
core   +1 more source

Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

, 2012
We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations.
You, Chun-Yeol
core   +1 more source

Read disturb fault detection in STT-MRAM [PDF]

2014 International Test Conference, 2014
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M. B.   +3 more
openaire   +2 more sources

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

AIP Advances, 2020
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor,
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh   +3 more
doaj   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Energy-efficient DSHE-MRAM-based in-memory computing for image segmentation [PDF]

APL Electronic Devices
Image segmentation approaches are among the crucial tasks in computer vision applications, such as object recognition, tracking, agriculture, autonomous vehicles, and medical imaging, relying heavily on deep learning neural networks (NN) for precise ...
Tanmoy Pramanik, Alok Kumar Shukla, Gaurav Verma, Amit Monga, Hemkant Nehete, Sandeep Soni   +5 more
doaj   +1 more source

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Switching probability of all-perpendicular spin valve nanopillars

, 2017
In all-perpendicular spin valve nanopillars the probability density of the free-layer magnetization is independent of the azimuthal angle and its evolution equation simplifies considerably compared to the general, nonaxisymmetric geometry.
Tzoufras, Michail
core   +2 more sources