Results 51 to 60 of about 3,273 (179)

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

AIP Advances, 2020
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor,
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh   +3 more
doaj   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

InfoMat, EarlyView.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He, Gaofei Wang, Jinfeng Zhai, Wentao Huang, Zhenyu Zhao, Zheng Zhang, Jiabin Shen, Pan He, Zengguang Cheng, Peng Zhou   +9 more
wiley   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Energy-efficient DSHE-MRAM-based in-memory computing for image segmentation [PDF]

APL Electronic Devices
Image segmentation approaches are among the crucial tasks in computer vision applications, such as object recognition, tracking, agriculture, autonomous vehicles, and medical imaging, relying heavily on deep learning neural networks (NN) for precise ...
Tanmoy Pramanik, Alok Kumar Shukla, Gaurav Verma, Amit Monga, Hemkant Nehete, Sandeep Soni   +5 more
doaj   +1 more source

Leaky‐Integrate‐Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin‐Orbit Torque

Advanced Science, Volume 13, Issue 16, 18 March 2026.
A spintronic leaky‐integrate‐and‐fire neuron is realized using Spin Orbit Torque driven domain‐wall motion for integration and synthetic antiferromagnetic coupling for the leaky process. The specialized Hall‐bar geometry enables controlled DW dynamics, achieving repeatable integration and firing events. This compact, CMOS‐compatible design highlights a
Badsha Sekh, Durgesh Kumar, Hasibur Rahaman, Ravi Shankar Verma, Ramu Maddu, Jianpeng Chan, Wai Lum William Mah, Stuart S. P. Parkin, S. N. Piramanayagam   +8 more
wiley   +1 more source

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source