Results 61 to 70 of about 3,273 (179)

Switching probability of all-perpendicular spin valve nanopillars

, 2017
In all-perpendicular spin valve nanopillars the probability density of the free-layer magnetization is independent of the azimuthal angle and its evolution equation simplifies considerably compared to the general, nonaxisymmetric geometry.
Tzoufras, Michail
core   +2 more sources

Embedded systems to high performance computing using STT-MRAM [PDF]

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017, 2017
The scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of CMOS transistors, heat dissipation effects limit the density and speed of current systems-on-chip.
Senni, Sophiane, Delobelle, Thibaud, Coi, Odilia, Péneau, Pierre-Yves, Torres, Lionel, Gamatié, Abdoulaye, Benoit, Pascal, Sassatelli, Gilles   +7 more
openaire   +2 more sources

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

Influence of Quantum and Thermal Noise on Spin-Torque-Driven Magnetization Switching

, 2013
We apply a recently developed quantum theory of spin transfer torque to study the effect of the quantum noise in spin transfer process on the magnetization switching in spin-torque-driven devices. The quantum noise induces considerable fluctuation of the
Wang, Yong, Zhang, Fu-Chun, Zhou, Yan
core   +1 more source

Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In‐Memory Computing

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A 48 × 48 ferroelectric tunnel junction (FTJ) crossbar array is fabricated and optimized through postmetallization annealing, enabling stable polarization switching and reliable multilevel conductance programming. Half‐bias operation, accurate vector–matrix multiplication with less than 1% error, and CIFAR‐10 image classification with near‐software ...
Sangwook Youn, Hwiho Hwang, Hyungjin Kim
wiley   +1 more source

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

, 2014
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally ...
Auffret, S., Buda-Prejbeanu, L. D., de Castro, M. Marins, Devolder, T., Dieny, B., Ducruet, C., Ebels, U., Lacoste, B., Prejbeanu, I. L., Rodmacq, B., Sousa, R. C., Vila, L.   +11 more
core   +3 more sources

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE Access
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network.
Belal Jahannia, Seyed Ali Ghasemi, Hamed Farbeh   +2 more
doaj   +1 more source

Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers

IEEE Access, 2019
The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon, Pascal Benoit, Lionel Torres, Sophiane Senni, Guillaume Prenat, Gregory Di Pendina   +5 more
doaj   +1 more source

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports, Volume 8, Issue 3, March 2026.
This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley   +1 more source