Results 71 to 80 of about 3,273 (179)

Detrimental Effect of Interfacial Dzyaloshinskii-Moriya Interaction on Perpendicular Spin-Transfer-Torque Magnetic Random Access Memory

, 2015
Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions.
Jang, Peong-Hwa, Lee, Kyung-Jin, Lee, Seo-Won, Lee, Seung-Jae, Song, Kyoungmi   +4 more
core   +1 more source

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

IEEE Access, 2019
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao   +3 more
doaj   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]

, 2017
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core  

Néel Tensor Torque in Polycrystalline Antiferromagnets

Advanced Materials, Volume 38, Issue 9, 12 February 2026.
This work introduces a Néel tensor torque based on a rank‐two symmetric tensor capturing spin correlations in a polycrystalline antiferromagnet. It shows the Néel tensor can be shaped and reshaped through the spin‐orbit torque (SOT) technique, enabling field‐free SOT switching with a specific polarity of the adjacent ferromagnet. This discovery opens a
Chao‐Yao Yang, Sheng‐Huai Chen, Chih‐Hsiang Tseng, Hsiu‐Hau Lin, Chih‐Huang Lai   +4 more
wiley   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

Instability Mechanism for STT-MRAM switching

, 2016
Presented at the 2016 Joint MMM-Intermag Conference, January 11-15, 2016, San Diego, California.
Visscher, P. B., Munira, Kamaram, Rosati, Robert J.   +2 more
openaire   +2 more sources