Results 81 to 90 of about 3,273 (179)

Enhancing On-Device DNN Inference Performance With a Reduced Retention-Time MRAM-Based Memory Architecture

IEEE Access
As applications using deep neural networks (DNNs) are increasingly deployed on mobile devices, researchers are exploring various methods to achieve low energy consumption and high performance. Recently, advances in STT-MRAM have shown promise in offering
Munhyung Lee, Taehan Lee, Junwon Yeo, Hyukjun Lee   +3 more
doaj   +1 more source

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj  

Standby magnetic immunity calculator for STT-MRAM [PDF]

AIP Advances
This work investigates the impact of external magnetic fields, field orientation, temperature, and exposure time on the standby magnetic immunity (SMI) of spin-transfer torque magnetoresistive random-access memory. Wafer-level measurements were performed
A. Talapatra, F. Schlaphof, P. Scharf, M. Mansueto, D. Sanchez Hazen, J. Müller, S. Soss, A. Zaka   +7 more
doaj   +1 more source

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source

A Timing-Based Split-Path Sensing Circuit for STT-MRAM. [PDF]

Micromachines (Basel), 2022
Ishdorj B, Kim J, Kim JH, Na T.
europepmc   +1 more source

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario. [PDF]

Micromachines (Basel), 2021
Bian Z, Hong X, Guo Y, Naviner L, Ge W, Cai H.   +5 more
europepmc   +1 more source

Magnetization switching in nanoelements induced by the spin-transfer torque: Study by massively parallel micromagnetic simulations

AIP Advances, 2019
In this paper we present a detailed numerical study of magnetization switching in shape-anisotropic thin-film nanoelements. These elements are at present of the major interest for the applied solid state magnetism as main components of a new generation ...
Elena K. Semenova, Dmitry V. Berkov
doaj   +1 more source

Read-Tuned STT-RAM and eDRAM Cache Hierarchies for Throughput and Energy Optimization

IEEE Access, 2018
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from last level cache (LLC), which are frequently repeated, has become a major concern.
Navid Khoshavi, Ronald F. Demara
doaj   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source

Modeling thermal effects in STT-MRAM

Solid-State Electronics, 2023
Tomáš Hadámek, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov   +3 more
openaire   +1 more source